| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Sanyo Semicon Device |
2SD879 · In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. · The charge time is approximately 1 second faster than that of germanium transistors. · Less power dissipation because of low Collector-toEmitter Voltage VCE( |
|
|
|
|
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor · In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. · The charge time is approximately 1 second faster than that of germanium transistors. · Less power dissipation because of low Collector-toEmitter Voltage VCE( |
|
Desde 2024. D4U Semiconductor.
|