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2SD879 |
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| Part Number | 2SD879 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number:EN550F NPN Epitaxial Planar Silicon Transistor 2SD879 1.5V, 3V Strobe Applications Features · In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.... |
| Features |
· In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. · The charge time is approximately 1 second faster than that of germanium transistors. · Less power dissipation because of low Collector-toEmitter Voltage VCE(sat), permitting more flashes of light to be emitted. · Small package and large allowable collector dissipation (TO-92, PC=750mW). · Large current capacity and highly resistant to breakdown. · Excellent linearity of hFE in the region from low current to high current. Specifications Package Dimensions unit:mm 2003B [2SD879] 5.0 4.0 4.0 0.6 2.0 14... |
| Document |
 2SD879 Data Sheet
PDF 104.28KB |
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