Sanyo Semicon Device D10 Hoja de datos

No.	parte #	Fabricante	Descripción
1	D1047	Sanyo Semicon Device	2SD1047 · Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). · Wide ASO because of on-chip ballast resistance. · Good depenedence of fT on current and excellent high frequency responce. Packag
2	D1061	Sanyo Semicon Device	2SD1061 · Low saturation voltage : VCE(sat)=( –)0.4V max. · Wide ASO Package Dimensions unit:mm 2010C [2SB825/2SD1061] ( ) : 2SB825 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emit
3	D1046	Sanyo Semicon Device	2SD1046 · Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). · Wide ASO because of built-in ballast resistance. · Goode dependence of fT on current and good HF characteristic. Package Dimensio
4	SVD101	Sanyo Semicon Device	X Band VCO / PLO • High Q. • High capacitance ratio. Package Dimensions unit: mm 1274 [SVD101] 1 : Cathode 2 : Anode Specifications Absolute Maximum Ratings at Ta=25°C Parameter Peak Reverse Voltage Average Rectified Current Allowable Power Dissipation Junction Te
5	2SD1047	Sanyo Semicon Device	NPN Triple Diffused Planar Silicon Transistors · Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). · Wide ASO because of on-chip ballast resistance. · Good depenedence of fT on current and excellent high frequency responce. Packag
6	SVD102	Sanyo Semicon Device	X Band VCO / PLO • High Q. • High capacitance ratio. Package Dimensions unit: mm 1274 [SVD102] 1 : Cathode 2 : Anode Specifications Absolute Maximum Ratings at Ta=25°C Parameter Peak Reverse Voltage Average Rectified Current Allowable Power Dissipation Junction Te
7	RD1004LS-SB5	Sanyo Semicon Device	Ultrahigh-Speed Switching Diode • • • • • Diffused Junction Type Silicon Diode Ultrahigh-Speed Switching Diode High breakdown voltage (VRRM=400V). High reliability. Easy to be mounted, good heat dissipation. Fast reverse recovery time. Low noise at the time of reverse recovery.
8	DBD10	Sanyo Semicon Device	1.0A Single-Phase Bridge Rectifier • • • Package Dimensions unit : mm 1314 Surface mount type (TM emboss taping) [DBD10] 0.25 Plastic molded structure. Peak reverse voltage : VRM=200V, 600V. Average rectified current : IO=1.0A. -- + 10.0 6.5 1.3 3.0 6.8 1.3 C0.8 ∼ ∼ 0.1 2
9	2SD1012	Sanyo Semicon Device	NPN TRANSISTOR 91003TN (KT)/91098HA (KT)/1115MY/1283KI, TS No.676-1/10 2SD1012 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Common Base Output Capacitance Collector-to-Emitte
10	2SD1048	Sanyo Semicon Device	PNP / NPN Epitaxial Planar Silicon Transistors • Ultrasmall package allows miniaturization in end products. • Large current capacity (IC=0.7A) and low-saturation voltage. Package Dimensions unit : mm 2018B [2SB815 / 2SD1048] 0.4 3 0.16 0 to 0.1 1.5 0.5 2.5 Specifications ( ) : 2SB815 Absolut
11	FTD1011	Sanyo Semicon Device	Ultrahigh-Speed Switching Applications • • • • Package Dimensions unit : mm 2155A [FTD1011] 0.65 0.425 Low ON-resistance. 2.5V drive. Mount height of 1.1mm. Composite type, facilitating high-density mounting. 8 5 0.5 4.5 6.4 0.95 3.0 1 0.25 4 (0.95) 0.125 1 : Drain1 2 : Source1
12	2SD1046	Sanyo Semicon Device	PNP/NPN Epitaxial Planar Silicon Transistors · Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). · Wide ASO because of built-in ballast resistance. · Goode dependence of fT on current and good HF characteristic. Package Dimensio
13	2SD1061	Sanyo Semicon Device	PNP/NPN Epitaxial Planar Silicon Transistors · Low saturation voltage : VCE(sat)=( –)0.4V max. · Wide ASO Package Dimensions unit:mm 2010C [2SB825/2SD1061] ( ) : 2SB825 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emit
14	2SD1062	Sanyo Semicon Device	PNP/NPN Epitaxial Planar Silicon Transistors · Low-saturation collector-to-emitter voltage : VCE(sat)= –0.5V (PNP), 0.4V (NPN) max. · Wide ASO leading to high resistance to breakdown. Package Dimensions unit:mm 2010C [2SB826/2SD1062] ( ) : 2SB826 Specifications Absolute Maximum Ratings at Ta
15	2SD1063	Sanyo Semicon Device	PNP/NPN Epitaxial Planar Silicon Transistors · Low collector-to-emitter saturation voltage : VCE(sat)=( –)0.4V max. · Wide ASO. Package Dimensions unit:mm 2022A [2SB827/2SD1063] ( ) : 2SB827 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-t
16	ESGD100	Sanyo Semicon Device	Modulator Applications • • Package Dimensions unit : mm 1321A [ESGD100] 0.5 0.05 Environmentally-considered chip scale package. Less parasitic components, conversion loss. Type No. Indication(Top view) 2 0.05 SA 0.05 0.05 0.6 0.25 0.5 Top View 2 1 0.4 1.0 0.25
17	RD1006LN	Sanyo Semicon Device	High-Speed Switching Diode • • • • • Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode High breakdown voltage (VRRM=600V). High reliability. One-point ﬁxing type plastic molded package facilitating easy mounting and heat dissipation. Fast reverse recovery
18	RD1006LS-SB5	Sanyo Semicon Device	Ultrahigh-Speed Switching Diode • • • • • Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode High breakdown voltage (VRRM=600V). High reliability. Easy to be mounted, good heat dissipation. Fast reverse recovery time. Low noise at the time of reverse recovery. Spec
19	D1060	Sanyo Semicon Device	2SD1060 · Low collector-to-emitter saturation voltage : VCE(sat)=( –)0.4V max/IC=( –)3A, IB=( –)0.3A. Package Dimensions unit:mm 2010C [2SB824/2SD1060] ( ) : 2SB824 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Co
20	FTD1012	Sanyo Semicon Device	Load Switching Applications • • • • Package Dimensions unit : mm 2155A [FTD1012] 0.65 8 5 0.5 4.5 6.4 0.95 Low ON-resistance. 4V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. 3.0 0.425 1 0.25 4 (0.95) 1.0 1 : Drain1 2 : Source1 3 :