| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Sanyo Semicon Device |
2SA1704 · Adoption of FBET, MBIT processes. · Low collector-to-emitter voltage. · Large current capacity and wide ASO. · Fast switching speed. ( ) : 2SA1704 E : Emitter C : Collector B : Base SANYO : NMP Specifications Absolute Maximum Ratings at Ta = 25˚ |
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Sanyo Semicon Device |
2SA1770 · Adoption of MBIT process. · High breakdown voltage and large current capacity. Package Dimensions unit:mm 2064A [2SA1770/2SC4614] 2.5 1.45 6.9 1.0 4.5 1.0 0.6 1.0 0.9 1 2 3 0.5 0.45 ( ) : 2SA1770 Specifications Absolute Maximum Ratings at T |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistor · Low collector-to-emitter saturation voltage. Package Dimensions unit:mm 2064 [2SA1703/2SC4483] ( ) : 2SA1703 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Adoption of FBET, MBIT processes. · High breakdown voltage, large current capacity. · Fast switching speed. Package Dimensions unit:mm 2064A [2SA1708/2SC4488] 2.5 1.45 6.9 1.0 4.5 1.0 0.6 1.0 0.9 1 2 3 0.5 0.45 ( ) : 2SA1708 2.54 2.54 Spec |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor · Large current capacity (IC=2A). · High breakdown voltage (VCEO≥400V). 2SA1786 : PNP Epitaxial Planar Silicon Transistor 2SC4646 : NPN Triple Diffused Planar Silicon Transistor 2SA1786/2SC4646 High Voltage Driver Applications Package Dimensions uni |
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Sanyo Semicon Device |
PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
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Sanyo Semicon Device |
PNP / NPN Transistor |
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Sanyo Semicon Device |
2SA1708 |
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Sanyo Semicon Device |
2SA1707 · Adoption of FBET, MBIT processes. · Large current capacity, wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions unit:mm 2064 [2SA1707/2SC4487] ( ) : 2SA1707 Specifications Absolute Maximum Ratings |
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Sanyo Semicon Device |
PNP Epitaxial Silicon Transistor |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Large current capacity. · Low collector-to-emitter saturation voltage. Package Dimensions unit:mm 2064 [2SA1701/2SC4481] ( ) : 2SA1701 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector- |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Adoption of FBET, MBIT processes. · Low collector-to-emitter voltage. · Large current capacity and wide ASO. · Fast switching speed. ( ) : 2SA1704 E : Emitter C : Collector B : Base SANYO : NMP Specifications Absolute Maximum Ratings at Ta = 25˚ |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High breakdown voltage (VCEO≥300V). · Excellent high frequency characteristic. · Adoption of MBIT process. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Package Dimensions unit:m |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistor · Very small-sized package permitting the 2SA1745/ 2SC4555-applied set to be made small and slim. · Low collector-to-emitter saturation voltage. Package Dimensions unit:mm 2059 [2SA1745/2SC4555] ( ) : 2SA1745 Specifications Absolute Maximum Ratin |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Adoption of MBIT process. · High breakdown voltage and large current capacity. Package Dimensions unit:mm 2064A [2SA1770/2SC4614] 2.5 1.45 6.9 1.0 4.5 1.0 0.6 1.0 0.9 1 2 3 0.5 0.45 ( ) : 2SA1770 Specifications Absolute Maximum Ratings at T |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor · Large current capacity (IC=1A). · High breakdown votlage (VCEO≥400V). 2SA1772 : PNP Epitaxial Planar Silicon Transistor 2SC4615 : NPN Triple Diffused Planar Silicon Transistor 2SA1772/2SC4615 High-Voltage Driver Applications Package Dimensions uni |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor · Adoption of MBIT process. · High breakdown voltage (VCEO≥400V). · Excellent linearity of hFE. PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA1784/2SC4644 High Voltage Driver Applications Package Dimensions |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor · Large current capacity (IC=1A). · High breakdown voltage (VCEO≥400V). 2SA1785 : PNP Epitaxial Planar Silicon Transistor 2SC4645 : NPN Triple Diffused Planar Silicon Transistor 2SA1785/2SC4645 High Voltage Driver Applications Package Dimensions un |
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Sanyo Semicon Device |
2SA1798 · Adoption of MBIT processes. · Low saturation voltage. · Fast switching speed. · Large current capacity. PNP Epitaxial Planar Silicon Transistors 2SA1798 20V/8A Switching Applications Package Dimensions unit:mm 2042A [2SA1798] Specifications Abso |
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Desde 2024. D4U Semiconductor.
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