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2SA1710 |
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| Part Number | 2SA1710 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number:EN3097 Features · High breakdown voltage (VCEO≥300V). · Excellent high frequency characteristic. · Adoption of MBIT process. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC44... |
| Features |
· High breakdown voltage (VCEO≥300V). · Excellent high frequency characteristic. · Adoption of MBIT process. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Package Dimensions unit:mm 2064 [2SA1710/2SC4490] ( ) : 2SA1710 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Chara... |
| Document |
 2SA1710 Data Sheet
PDF 146.64KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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