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Sanyo Semicon Device |
2SK3747 • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • High reliability (Adoption of HVP process). • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at |
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Sanyo Semicon Device |
2SK1413 · Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). · Micaless package facilitating mounting. Package Dimensions unit:mm 2076B [2SK1413] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 |
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Sanyo Semicon Device |
2SK1459 · Low ON-state resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting. www.DataSheet4U.com 3.2 Package Dimensions unit:mm 2078B [2SK1459] 10.0 3.5 7.2 4.5 2.8 16.1 16.0 0.9 1.2 14.0 3.6 0.7 0.75 1 2 3 0.6 1.2 Sp |
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Sanyo Semicon Device |
2SK2161 · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. www.DataSheet4U.com Package Dimensions unit:mm 2063A [2SK2161] 10.0 3.2 3.5 7.2 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 |
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Sanyo Semicon Device |
2SK1460 · Low ON-state resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting. Package Dimensions unit:mm 2078B [2SK1460] 10.0 3.5 4.5 2.8 3.2 7.2 16.0 16.1 0.9 1.2 14.0 3.6 0.7 0.75 1 2 3 Specifications Absolute Maximum |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1417 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1417] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 12 |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET |
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Sanyo Semicon Device |
N-Channel MOSFET · Largeyfs. · Ultralow noise figure. · Small Crss. Package Dimensions unit:mm 2034A [2SK427] 4.0 2.2 0.6 1.8 15.0 3.0 0.4 0.5 0.4 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltag |
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Sanyo Semicon Device |
2SK2045 · Low ON resistance. · Ultrahigh-speed switching. · High-speed diode built in (trr=140ns). · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2078B [2SK2045] 10.0 3.5 4.5 2.8 3.2 7.2 16.0 16.1 0.9 1.2 14.0 3.6 0.7 0.7 |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1416 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1416] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 12 |
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Sanyo Semicon Device |
N-Channel JFET |
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Sanyo Semicon Device |
2SK3709 • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Motor driver, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Sou |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2077A [2SK1414] 20.0 3.3 5.0 26.0 6.0 2.0 1.0 20.7 2.0 3.4 1.2 1 23 Specifications Absolute Maximu |
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Sanyo Semicon Device |
Silicon N-Channel MOSFET |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SK1897] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications 2.55 A |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Surface mount type device making the following possible. · Reduction in the number of manufacturing pro- cesses for 2SK1898-applied equipment. · High density surface mount appli |
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Sanyo Semicon Device |
2SK3699 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications www.DataSheet4U.com Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute max |
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Sanyo Semicon Device |
2SK3706 • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Motor driver, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Sou |
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Sanyo Semicon Device |
2SK3703 • • • • Package Dimensions unit : mm 2063A [2SK3703] 10.0 3.2 3.5 7.2 Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 2.55 Specification |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low noise NF=1.8dB typ (f=100MHz). · High power gain PG=27dB typ (f=100MHz). · Small reverse transfer capacitance Crss=0.035pF (VDS=10V, f=1MHz). · Ultrasmall-sized package (MCP) permitting 2SK1067-applied sets to be made smaller and slimmer. Pack |
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Desde 2024. D4U Semiconductor.
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