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2SK1417 N-Channel Silicon MOSFET

2SK1417

2SK1417
2SK1417 2SK1417
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Part Number 2SK1417
Manufacturer Sanyo Semicon Device
Description Ordering number:EN3555 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1417 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1417] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-S.
Features
· Low ON-state resistance.
· Ultrahigh-speed switching.
· Converters. N-Channel Silicon MOSFET 2SK1417 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1417] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 2.
Datasheet Datasheet 2SK1417 Data Sheet
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2SK1417

VBsemi
2SK1417
Part Number 2SK1417
Manufacturer VBsemi
Title N-Channel MOSFET
Description 2SK1417-VB 2SK1417-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.024 at VGS = 10 V 0.028 at VGS = 4.5 V ID (A)a 50 40 TO-220AB FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dyna.
Features
• Halogen-free According to IEC 61249-2-21 Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Logic-Level Gate Drive
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC D GD S Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentf Contin.


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