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Sanyo Semicon Device |
2SD1047 · Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). · Wide ASO because of on-chip ballast resistance. · Good depenedence of fT on current and excellent high frequency responce. Packag |
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Sanyo Semicon Device |
2SD1061 · Low saturation voltage : VCE(sat)=( –)0.4V max. · Wide ASO Package Dimensions unit:mm 2010C [2SB825/2SD1061] ( ) : 2SB825 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emit |
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Sanyo Semicon Device |
2SD400 A VCE=(--)2V, IC=(--)50mA VCE=(--)2V, IC=(--)1A VCE=(--)10V, IC=(--)50mA VCB=(--)10V, f=1MHz IC=(--)500mA, IB=(--)50mA IC=(--)500mA, IB=(--)50mA IC=(--)10μA, IE=0A IC=(--)1mA, RBE=∞ IE=(--)10μA, IC=0A Ratings Unit (--)25 V (--)25 V (--)5 V ( |
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Sanyo Semicon Device |
2SD1913 Wide ASO (Adoption of MBIT process). • Low saturation voltage. www.DataSheet4U.net • High reliability. • High breakdown voltage. • Micaless package facilitating mounting. • 10.0 3.2 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 Specifications ( |
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Sanyo Semicon Device |
2SD2634 • • • • • Package Dimensions unit : mm 2174A [2SD2634] 16.0 3.4 5.6 3.1 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 5.0 21.0 4.0 22.0 8.0 2.8 2.0 2 |
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Sanyo Semicon Device |
2SD879 · In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. · The charge time is approximately 1 second faster than that of germanium transistors. · Less power dissipation because of low Collector-toEmitter Voltage VCE( |
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Sanyo Semicon Device |
2SD1046 · Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). · Wide ASO because of built-in ballast resistance. · Goode dependence of fT on current and good HF characteristic. Package Dimensio |
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Sanyo Semicon Device |
2SD331 |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors Æ Low collector-to-emitter saturation voltage. Æ High current and high fT. Æ Excellent linearity of hFE. Æ Fast switching time. Æ Small and slim package making it easy to make 2SB1204/2SD1804-applied sets smaller. 6.5 5.0 4 2.3 0.5 0.85 0.7 0.8 1 |
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Sanyo Semicon Device |
NPN Epitaxial Silicon Transistor |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • • • • • Package Dimensions unit : mm 2079C [2SD2627] 10.0 3.5 7.2 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 4.5 2.8 3.2 16.1 16.0 0.9 1.2 14.0 |
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Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
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Sanyo Semicon Device |
2SD1396 |
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Sanyo Semicon Device |
2SD1348 · Adoption of FBET and MBIT processes. · Low saturation voltage. · High current capacity and wide ASO. Package Dimensions unit:mm 2009B [2SB986/2SD1348] ( ) : 2SB986 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Bas |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor · In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. · The charge time is approximately 1 second faster than that of germanium transistors. · Less power dissipation because of low Collector-toEmitter Voltage VCE( |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High speed (tf=100ns). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). · On-chip damper diode. 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 1.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = |
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Sanyo Semicon Device |
2SD1806 |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · Wide ASO because of on-chip ballast resistance. · Capable of being mounted easily becasuse of one- point fixing type plastic molded package (Interchangeable with TO-3). · Large current capacity : IC=6A · Highly resistance breakdown due to wide ASO. |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistors · Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). · Wide ASO because of on-chip ballast resistance. · Good depenedence of fT on current and excellent high frequency responce. Packag |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High DC current gain. · High current capacity and wide ASO. · Low saturation voltage. Package Dimensions unit:mm 2022A [2SB912/2SD1229] ( ) : 2SB912 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Colle |
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Desde 2024. D4U Semiconductor.
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