| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Sanyo |
DC / DC Converter Applications • • • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilicates miniaturization in end products (mounting height : 0.85mm). High allowable power di |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. N-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain |
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Sanyo |
P-Channel Silicon MOSFET • ON-resistance RDS(on)1=152mΩ (typ.) • 1.2V drive • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) |
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Sanyo |
Ultrahigh-Speed Switching Applications • • • Package Dimensions unit : mm 2167A [MCH3308] 0.25 0.3 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 3 2.1 1.6 0.25 0.65 2.0 0.07 2 1 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage |
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Sanyo |
Ultrahigh-Speed Switching Applications • • • Package Dimensions unit : mm 2167 [MCH3412] 0.25 0.3 0.15 Low ON-resinstance. Ultrahigh-speed switching. 4V drive. 3 1.6 2.1 1 0.65 2.0 2 0.25 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 Specifications Absolute Maximum Ratings at Ta=25°C |
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Sanyo |
DC / DC Converter Applications • Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm (MCH3405) and a Schottky Barrier Diode (SBS007M) 2195 contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switc |
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Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications • • • Package Dimensions unit : mm 2167A [MCH3445] 0.25 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 0.3 0.15 3 2.1 1.6 0.25 0.65 2.0 (Bottom view) 0.07 2 1 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain |
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Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications • • • Package Dimensions unit : mm 2167A [MCH3319] 0.25 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 0.3 0.15 3 2.1 1.6 0.25 0.65 2.0 (Bottom view) 0.07 2 1 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain |
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Sanyo Semicon Device |
General-Purpose Switching Device Applications • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain |
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Sanyo Semicon Device |
General-Purpose Switching Device Applications • MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications • • Composite type with a N-channel sillicon MOSFET (MCH3445) and a schottky barrier diode (SS10015M) contained in one package facilit |
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Sanyo |
DC / DC Converter Applications • • • • • • Adoption of MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (0.85mm). High allowable power dissipation. 0.3 3 |
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Sanyo |
High-Current Switching Applications • • • • • 0.3 3 0.15 • Adoption of FBET, MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultraminiature package facilitates miniaturization in end products (mounting height : 0.85mm). H |
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Sanyo |
DC / DC Converter Applications • • • • • • Adoption of MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High speed switching. Ultrasmall package facilitates miniaturization in end products (0.85mm). High allowable power dissipation. 0.3 3 |
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Sanyo |
DC / DC Converter Applications • • • • • • Adoption of MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (0.85mm). High allowable power dissipation. 0.3 3 |
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Sanyo |
Ultrahigh-Speed Switching Applications · Low ON resistance. · Ultrahigh-speed swithcing. · 4V drive. Package Dimensions unit:mm 2167 [MCH3302] 0.25 0.3 3 0.15 1.6 1 0.65 2.0 2 0.25 0.85 2.1 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate |
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Sanyo |
Ultrahigh-Speed Switching Applications • • • Package Dimensions unit : mm 2167 [MCH3309] 0.25 0.3 0.15 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 3 1.6 2.1 1 0.65 2.0 2 0.25 Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage D |
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Sanyo |
Ultrahigh-Speed Switching Applications · Low ON resistance. · Ultrahigh-speed swithcing. · 2.5V drive. Package Dimensions unit:mm 2167 [MCH3401] 0.25 0.3 3 0.15 1.6 1 0.65 2.0 2 0.25 0.85 2.1 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Ga |
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Sanyo |
Ultrahigh-Speed Switching Applications · Low ON resistance. · Ultrahigh-speed swithcing. · 4V drive. Package Dimensions unit:mm 2167 [MCH3402] 0.25 0.3 3 0.15 1.6 1 0.65 2.0 2 0.25 0.85 2.1 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate |
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Sanyo |
Ultrahigh-Speed Switching Applications • • • Package Dimensions unit : mm 2167A [MCH3408] 0.25 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 0.3 0.15 3 2.1 1.6 0.25 0.65 2.0 0.07 2 1 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Volta |
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Sanyo |
Ultrahigh-Speed Switching Applications • • • Package Dimensions unit : mm 2167 [MCH3410] 0.25 0.3 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 3 1.6 2.1 1 0.65 2.0 2 0.25 Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Dra |
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Desde 2024. D4U Semiconductor.
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