Sanyo C47 Hoja de datos

No.	parte #	Fabricante	Descripción
1	C4769	Sanyo Semicon Device	2SC4769 · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC4769] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 w
2	C4732	Sanyo	2SC4732
3	C4731	Sanyo Semicon Device	2SC4731 · Low collector-to-emitter saturation voltage. · High Gain-Bandwidth Product. · Excellent linearity of DC Current Gain. · Fast switching speed. 10.5 2.6 1.4 1.2 1.0 7.5 8.5 1.6 0.5 1 2 3 0.5 Specifications ( ) : 2SA1827 Absolute Maximum Ratin
4	C4705	Sanyo	2SC4705 · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage : VCE(sat)≤0.5V max. · High VEBO : VEBO≥15V. · Small size making it easy to provide high-density, hybrid ICs. Package Dimensions unit:mm 2038A [2SC4705] 4.5 1.6
5	C4770	Sanyo Semicon Device	2SC4770 · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. www.DataSheet4U.com Package Dimensions unit:mm 2039D [2SC4770] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2
6	C4727	Sanyo	2SC4727 · Adoption of MBIT process. · Low saturation voltage. · Fast switching speed. · Large current capacity. · It is possible to make appliances more compact because its height on board is 9.5mm. · Effective in automatic inserting and counting stocked amo
7	C4729	Sanyo	2SC4729 · Low collector-to-emitter saturation voltage. · High Gain-Bandwidth Product. · Excellent linearity of DC Current Gain. · Fast switching speed. Package Dimensions unit:mm 2084 [2SA1825/2SC4729] ( ) : 2SA1825 Specifications Absolute Maximum Rating
8	C4734	Sanyo	2SC4734 · Large current capacity (IC=2A). · High breakdown voltage (VCEO≥400V). · Possible to offer the 2SA1830/2SC4734 devices in a tape reel packaging, which facilitates automatic insertion. Package Dimensions unit:mm 2084A [2SA1830/2SC4734] ( ) : 2SA183
9	C4735	Sanyo	2SC4735 · Large power type such as PC=1.5W when used without heatsink. · It is possible to make appliances more compact because its height on board is 9.5mm. · Effective in automatic inserting and counting stocked amount because of being provided for radial
10	C4736	Sanyo	2SC4736 • Large current (IC=2A). • Adoption of MBIT process. • High DC current gain (hFE=800 to 3200). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). • High emitter-to-base voltage (VEBO≥15V). • Large power type such as PC=1.5W when used with
11	C4737	Sanyo	2SC4737 · High DC current gain. · Wide ASO. · On-chip Zener diode of 60 ±10V between collector and base. · Uniformity in collector-to-base breakdown voltage. · High inductive load handling capability. Specifications Package Dimensions unit:mm 2084B [2SC4
12	2SC4710	Sanyo Semicon Device	NPN TRANSISTOR · High breakdown voltage (VCEO min=2100V). · Small Cob (typical Cob=1.3pF). · Wide ASO. · High reliability (Adoption of HVP process). · Full isolation package. Package Dimensions unit:mm 2079B [2SC4710] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.
13	2SC4728	Sanyo Semicon Device	NPN Epitaxial Planar Silicon Transistors · Low collector-to-emitter saturation voltage. · High Gain-Bandwidth Product. · Excellent linearity of DC Current Gain. · Fast switching speed. ( ) : 2SA1824 E : Emitter C : Collector B : Base SANYO : FLP Specifications Absolute Maximum Ratings at
14	2SC4729	Sanyo Semicon Device	PNP/NPN Epitaxial Planar Silicon Transistors · Low collector-to-emitter saturation voltage. · High Gain-Bandwidth Product. · Excellent linearity of DC Current Gain. · Fast switching speed. Package Dimensions unit:mm 2084 [2SA1825/2SC4729] ( ) : 2SA1825 Specifications Absolute Maximum Rating
15	2SC4734	Sanyo Semicon Device	NPN Triple Diffused Planar Silicon Transistor · Large current capacity (IC=2A). · High breakdown voltage (VCEO≥400V). · Possible to offer the 2SA1830/2SC4734 devices in a tape reel packaging, which facilitates automatic insertion. Package Dimensions unit:mm 2084A [2SA1830/2SC4734] ( ) : 2SA183
16	16TQC47M	Sanyo Semiconductor	High Voltage Products M,20TQC47M,16TQC10M,16TQC68M,20TQC15M,16TQC22M, 20TQC22MV,20TQC33MV,16TQC33MV,16TQC47MV (rated voltage applied) Characteristics –55 to +105 (°C) 5.6 to 68 (µF) _ 20% M:+ 16 to 25 (V.DC) ≤ 10.0 (%) ≤ 0.1CV B2size: ≤ 0.3CV Please see the attached char
17	6SEPC470MX	Sanyo Semiconductor	Aluminum Solid Capacitors less than an initial standard tanδ 1.5 times or less than an initial standard ESR Below an initial standard Leakage current Within ±20% ∆C/C 1.5 times or less than an initial standard tanδ 1.5 times or less than an initial standard ESR Below an initi
18	6SEPC470M	Sanyo Semiconductor	Aluminum Solid Capacitors less than an initial standard tanδ 1.5 times or less than an initial standard ESR Below an initial standard Leakage current Within ±20% ∆C/C 1.5 times or less than an initial standard tanδ 1.5 times or less than an initial standard ESR Below an initi
19	2SC4732	Sanyo	Epitaxial planar type silicon transistor
20	C4710	Sanyo	2SC4710 · High breakdown voltage (VCEO min=2100V). · Small Cob (typical Cob=1.3pF). · Wide ASO. · High reliability (Adoption of HVP process). · Full isolation package. Package Dimensions unit:mm 2079B [2SC4710] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.