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C4736 |
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| Part Number | C4736 |
| Manufacturer | Sanyo |
| Description | Ordering number : EN3975A 2SC4736 SANYO Semiconductors DATA SHEET 2SC4736 NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications Features • Large current (IC=2A). • Adoption of MBIT process. • High DC current gain (hFE=800 to 3200). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). • High emit. |
| Features |
• Large current (IC=2A). • Adoption of MBIT process. • High DC current gain (hFE=800 to 3200). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). • High emitter-to-base voltage (VEBO≥15V). • Large power type such as PC=1.5W when used without heatsink. • It is possible to make appliances more compact because its height on board is 9.5mm. • Effective in automatic inserting and counting stocked amount because of being provided for radial taping. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage. |
| Datasheet |
 C4736 Data Sheet
PDF 41.55KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | C4730 |
Sanyo |
2SC4730 |
|
| 2 | C4731 |
Sanyo Semicon Device |
2SC4731 |
|
| 3 | C4732 |
Sanyo |
2SC4732 |
|
| 4 | C4734 |
Sanyo |
2SC4734 |
|
| 5 | C4735 |
Sanyo |
2SC4735 |
|
| 6 | C4737 |
Sanyo |
2SC4737 |
|
| 7 | C4738 |
Toshiba |
2SC4738 |
|
| 8 | C4738F |
Toshiba |
2SC4738F |
|
| 9 | C4700 |
Vectron International |
OCXO Ultra-High Stability Excellent Temperature Stability SC-Cut Crystal Crystal |
|
| 10 | C4704 |
Hitachi Semiconductor |
Silicon NPN Epitaxial |
|
Desde 2024. D4U Semiconductor.
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