| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Sanyo |
2SC3637 · High reliability (Adoption of HVP process). · Fast speed. · High breakdown voltage. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3637] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage |
|
|
|
|
Sanyo Semicon Device |
2SC3675 · High breakdown voltage (VCEO min=900V). · Small Cob (Cob typ=2.8pF). · Wide ASO (Adoption of MBIT process). · High reliability (Adoption of HVP process). JEDEC : TO-220AB EIAJ : SC46 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter |
|
|
|
|
Sanyo |
1 MEG (131072 words X 8 bits) SRAM |
|
|
|
|
Sanyo Semicon Device |
2SC3688 · Fast speed (t f=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). · Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta = 25˚C Pl arameter CV ollector-to-Base Voltage CV ollector-t |
|
|
|
|
Sanyo Semicon Device |
2SC3636 · High reliability (Adoption of HVP process). · Fast speed. · High breakdown voltage. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3636] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage |
|
|
|
|
Sanyo Semicon Device |
2SC3642 · High reliability (Adoption of HVP process). · Fast speed. · High breakdown voltage. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3642] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage |
|
|
|
|
Sanyo |
2SC3676 · High breakdown voltage (VCEO min=900V). · Small Cob (Cob typ=5.0pF). · Wide ASO (Adoption of MBIT process). · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC3676] Specifications JEDEC : TO-220AB EIAJ : SC46 1 : |
|
|
|
|
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching time. · Ultrasmall size making it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1416/2SC3646] 4.5 |
|
|
|
|
Sanyo Semicon Device |
NPN Transistor · High DC current gain (hFE=500 to 2000). · High breakdown voltage (VCEO≥100V). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). · Very small size making it easy to provide high- density, small-sized hybrid IC’s. |
|
|
|
|
Sanyo Semicon Device |
8K x 8 SRAM |
|
|
|
|
Sanyo |
2SC3646 · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching time. · Ultrasmall size making it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1416/2SC3646] 4.5 |
|
|
|
|
Sanyo |
2SC3647 • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Specifications ( ) : 2SA1417 Absolute Maximum Ratings at Ta |
|
|
|
|
Sanyo |
2SC3649 · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Ultrasmall size making it easy to provide high- density hybrid ICs. Package Dimensions unit:mm 2038A [2SA1419/2SC3649] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA |
|
|
|
|
Sanyo |
2SC3650 • High DC current gain (hFE=800 to 3200). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). • Large current capacity (IC=1.2A). • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications Absolute M |
|
|
|
|
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High reliability (Adoption of HVP process). · Fast speed. · High breakdown voltage. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3636] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage |
|
|
|
|
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High reliability (Adoption of HVP process). · Fast speed. · High breakdown voltage. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3642] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage |
|
|
|
|
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High reliability (Adoption of HVP process). · Fast speed. · High breakdown voltage. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3643] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage |
|
|
|
|
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High reliability (Adoption of HVP process). · High speed. · High breakdown voltage. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3644] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage |
|
|
|
|
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistor • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Specifications ( ) : 2SA1417 Absolute Maximum Ratings at Ta |
|
|
|
|
Sanyo Semicon Device |
NPN Transistor · High breakdown voltage (VCEO min=900V). · Small Cob (Cob typ=2.8pF). · Wide ASO (Adoption of MBIT process). · High reliability (Adoption of HVP process). JEDEC : TO-220AB EIAJ : SC46 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter |
|
Desde 2024. D4U Semiconductor.
|