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C3636 |
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| Part Number | C3636 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number:EN1614C NPN Triple Diffused Planar Silicon Transistor 2SC3636 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High reliability (Adoption of HVP ... |
| Features |
· High reliability (Adoption of HVP process). · Fast speed. · High breakdown voltage. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3636] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff... |
| Document |
 C3636 Data Sheet
PDF 115.91KB |
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