| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Samsung semiconductor |
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Random access time/Page Access Time 3.3V Operation : 100/30ns(Max.) 3.0V Operation : 120/50ns(Max.) • 4 Words / 8 bytes page access • Supply voltage : single +3.0V/ single + |
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Samsung Semiconductor |
(KM23x32000xTY) 32M-Bit CMOS Mask ROM • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time 3.3V/3.0V Operation : 100ns(Max.) 2.5V Operation : 150ns(Max.) • Supply voltage KM23V32000D(E)TY : single +3.0V/ single +3.3V KM23S32000D(E |
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Samsung Semiconductor |
(KM23x32000xTY) 32M-Bit CMOS Mask ROM • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time 3.3V/3.0V Operation : 100ns(Max.) 2.5V Operation : 150ns(Max.) • Supply voltage KM23V32000D(E)TY : single +3.0V/ single +3.3V KM23S32000D(E |
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Samsung Semiconductor |
NMOS MASK ROM |
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Samsung semiconductor |
8K x 8 BIT CMOS ELECTRICALLY ERASABLE PROM |
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Samsung Semiconductor |
(KM23x32000xTY) 32M-Bit CMOS Mask ROM • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time 3.3V/3.0V Operation : 100ns(Max.) 2.5V Operation : 150ns(Max.) • Supply voltage KM23V32000D(E)TY : single +3.0V/ single +3.3V KM23S32000D(E |
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Samsung Semiconductor |
(KM23x32000xTY) 32M-Bit CMOS Mask ROM • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time 3.3V/3.0V Operation : 100ns(Max.) 2.5V Operation : 150ns(Max.) • Supply voltage KM23V32000D(E)TY : single +3.0V/ single +3.3V KM23S32000D(E |
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Samsung Semiconductor |
(KM23x4000xTY) 4M-Bit CMOS Mask ROM • 524,288 x 8 bit organization • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) 2.5V Operation : 250ns(Max.) • Supply voltage KM23V4000D(E)TY : single +3.0V/ single +3.3V KM23S4000D(E)TY : single +2.5V • Current consumptio |
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Samsung Semiconductor |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM |
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Samsung semiconductor |
KM28C65 |
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Samsung semiconductor |
4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM • Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation • All inputs and outputs |
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Samsung semiconductor |
4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM • Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation • All inputs and outputs |
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Samsung semiconductor |
8K x 8 BIT CMOS ELECTRICALLY ERASABLE PROM |
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Samsung semiconductor |
16M x 8 Bit NAND Flash Memory • Voltage supply : 2.7V~3.6V • Organization - Memory Cell Array : (16M + 512K)bit x 8bit - Data Register : (512 + 16)bit x8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte • 528-Byte Page Read Operatio |
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Samsung semiconductor |
16M x 8 Bit NAND Flash Memory • Voltage supply : 2.7V~3.6V • Organization - Memory Cell Array : (16M + 512K)bit x 8bit - Data Register : (512 + 16)bit x8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte • 528-Byte Page Read Operatio |
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Samsung semiconductor |
512K x 8 bit NAND Flash Memory • Voltage Supply: 3.0V~5.5V • Organization - Memory Cell Array : 512K x 8 - Data Register : 32 x 8 bit • Automatic Program and Erase (Typical) - Frame Program : 32 Byte in 500µs - Block Erase : 4K Byte in 6ms • 32-Byte Frame Read Operation - Random A |
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Samsung semiconductor |
32M-Bit (4Mx8/2Mx16) COMS MASK ROM • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time : 100ns(Max.) Page Access Time : 30ns(Max.) • 8 words / 16 bytes page access • Supply voltage : single +3.3V • Current consumption Operatin |
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Samsung semiconductor |
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Random access time/Page Access Time 3.3V Operation : 100/30ns(Max.) 3.0V Operation : 120/50ns(Max.) • 4 Words / 8 bytes page access • Supply voltage : single +3.0V/ single + |
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Samsung semiconductor |
8M x 8 Bit NAND Flash Memory • Voltage Supply : 2.7V ~ 3.6V • Organization - Memory Cell Array : (8M + 256K)bit x 8bit - Data Register : (512 + 16)bit x8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (8K + 256)Byte • 528-Byte Page Read Operatio |
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Samsung semiconductor |
8M x 8 Bit NAND Flash Memory • Voltage Supply : 2.7V ~ 3.6V • Organization - Memory Cell Array : (8M + 256K)bit x 8bit - Data Register : (512 + 16)bit x8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (8K + 256)Byte • 528-Byte Page Read Operatio |
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Desde 2024. D4U Semiconductor.
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