Busque con el número de pieza junto con el fabricante o la descripción
KM29U64000IT |
Click to view a larger image
| Part Number | KM29U64000IT |
| Manufacturer | Samsung semiconductor |
| Description | The KM29U64000 is a 8M(8,388,608)x8bit NAND Flash Memory with a spare 256K(262,144)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program ope... |
| Features |
• Voltage Supply : 2.7V ~ 3.6V • Organization - Memory Cell Array : (8M + 256K)bit x 8bit - Data Register : (512 + 16)bit x8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (8K + 256)Byte • 528-Byte Page Read Operation - Random Access : 7µs(Max.) - Serial Page Access : 50ns(Min.) • Fast Write Cycle Time - Program time : 200 µs(typ.) - Block Erase time : 2ms(typ.) • Command/Address/Data Multiplexed I/O port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology - Endurance : 1M Program/Erase Cycles - ... |
| Document |
 KM29U64000IT Data Sheet
PDF 481.39KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | KM29U64000T |
Samsung semiconductor |
8M x 8 Bit NAND Flash Memory |
|
| 2 | KM29U128IT |
Samsung semiconductor |
16M x 8 Bit NAND Flash Memory |
|
| 3 | KM29U128T |
Samsung semiconductor |
16M x 8 Bit NAND Flash Memory |
|
| 4 | KM29N040IT |
Samsung Electronics |
Flash Memory |
|
| 5 | KM29N040T |
Samsung Electronics |
Flash Memory |
|
| 6 | KM29N16000 |
Samsung Electronics |
2M x 8-Bit NAND Flash Memory |
|
Desde 2024. D4U Semiconductor.
|