| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Samsung semiconductor |
64K X 4 Bit CMOS VIDEO RAM |
|
|
|
|
Samsung Semiconductor |
512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM • 3.3V ±5% power supply for device operation • 2.5V ±5% power supply for I/O interface • SSTL_2 compatible inputs/outputs • 4 banks operation • MRS cycle with address key programs -. Read latency 2, 3 (clock) -. Burst length (2, 4, 8 and Full page) - |
|
|
|
|
Samsung semiconductor |
128K x 32Bit x 2 Banks Synchronous Graphic RAM ¡Ü ¡Ü CMOS SGRAM GENERAL DESCRIPTION The KM4132G271A is 8,388,608 bits synchronous high data rate Dynamic RAM organized as 2 x 131,072 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cy |
|
|
|
|
Samsung semiconductor |
256K X 1 Bit Dynamic RAM with Page / Nibble Mode |
|
|
|
|
Samsung semiconductor |
256K X 1 Bit Dynamic RAM with Page / Nibble Mode |
|
|
|
|
Samsung semiconductor |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumpt |
|
|
|
|
Samsung semiconductor |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung′ s advanced C |
|
|
|
|
Samsung semiconductor |
4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. Four separate CAS pins provide for seperate I/O operation allowing this d |
|
|
|
|
Samsung semiconductor |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 2Mx8 Fast Page Mode DRAM family is fabricated using Samsung's advance |
|
|
|
|
Samsung semiconductor |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 2Mx8 Fast Page Mode DRAM family is fabricated using Samsung's advance |
|
|
|
|
Samsung semiconductor |
8M x 8bit CMOS Dynamic RAM with Extended Data Out of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 8Mx8 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and |
|
|
|
|
Samsung semiconductor |
256K x 16Bit CMOS Dynamic RAM |
|
|
|
|
Samsung semiconductor |
256K x 16Bit CMOS Dynamic RAM |
|
|
|
|
Samsung semiconductor |
256K x 16Bit CMOS Dynamic RAM |
|
|
|
|
Samsung semiconductor |
128Mb DDR SDRAM |
|
|
|
|
Samsung semiconductor |
128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL • • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual bank / Pulse RAS MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All in |
|
|
|
|
Samsung semiconductor |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 Fast Page Mode DRAM family is fabricated using Samsung's advanc |
|
|
|
|
Samsung semiconductor |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 Fast Page Mode DRAM family is fabricated using Samsung′s advanc |
|
|
|
|
Samsung semiconductor |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung′ s advanced C |
|
|
|
|
Samsung semiconductor |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 Fast Page Mode DRAM family is fabricated using Samsung's advanc |
|
Desde 2024. D4U Semiconductor.
|