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KM432D2131 |
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| Part Number | KM432D2131 |
| Manufacturer | Samsung Semiconductor |
| Description | FOR 512K x 32Bit x 4 Bank DDR SGRAM The KM432D2131 is 67,108,864 bits of hyper synchronous data rate Dynamic GRAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance ... |
| Features |
• 3.3V ±5% power supply for device operation • 2.5V ±5% power supply for I/O interface • SSTL_2 compatible inputs/outputs • 4 banks operation • MRS cycle with address key programs -. Read latency 2, 3 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (sequential & interleave) • Full page burst length for sequential burst type only • Start address of the full page burst should be even • All inputs except data & DM are sampled at the positive going edge of the system clock • Differential clock input • Data I/O transactions on both edges of Data strobe • Data input & output & DM are s... |
| Document |
 KM432D2131 Data Sheet
PDF 806.39KB |
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