| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
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Samsung Electronics |
N-Channel Power MOSFET |
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Samsung |
N-Channel Power Mosfets |
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Samsung Electronics |
Advanced Power MOSFET |
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Samsung |
N-Channel Power MOSFET |
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Samsung |
N-Channel Power MOSFETs |
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Samsung Electronics |
N-Channel Power MOSFET |
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Samsung Electronics |
Power MOSFET |
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Samsung |
N-Channel Power MOSFET |
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Samsung |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS I |
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Samsung Electronics |
(SSH20N45) N-Channel Power MOSFETs |
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Samsung Electronics |
(SSH6N55 / SSH6N60) N-Channel Power MOSFETs |
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Samsung Electronics |
(SSH6N55 / SSH6N60) N-Channel Power MOSFETs |
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Samsung Electronics |
Advanced Power MOSFET |
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Samsung Electronics |
Advanced Power MOSFET |
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Samsung Electronics |
(SSH5N70 / SSH5N80) N-Channel Power MOSFET |
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Samsung Electronics |
(SSH5N70 / SSH5N80) N-Channel Power MOSFET |
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Samsung semiconductor |
N-CHANNEL POWER MOSFETS |
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Samsung semiconductor |
POWER MOSFETS |
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Samsung semiconductor |
(SSH4N70 / SSH4N80) N-CHANNEL POWER MOSFETS |
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Samsung semiconductor |
(SSH4N70 / SSH4N80) N-CHANNEL POWER MOSFETS |
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Desde 2024. D4U Semiconductor.
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