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SSH10N80A |
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| Part Number | SSH10N80A |
| Manufacturer | Samsung |
| Title | Advanced Power MOSFET |
| Features |
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ.)
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGS EAS IAR EAR dv/dt
PD
TJ , TSTG
TL
Chara... |
| Document |
 SSH10N80A Data Sheet
PDF 209.61KB |
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Desde 2024. D4U Semiconductor.
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