| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
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Samsung Electronics |
Flash Memory • Single Voltage, 1.7V to 1.95V for Read and Write operations • Organization - 16,772,216 x 16 bit ( Word Mode Only) • Read While Program/Erase Operation • Multiple Bank Architecture - 16 Banks (16Mb Partition) • OTP Block : Extra 256Byte block • Rea |
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Samsung Electronics |
Flash Memory • Single Voltage, 1.7V to 1.95V for Read and Write operations • Organization - 16,772,216 x 16 bit ( Word Mode Only) • Read While Program/Erase Operation • Multiple Bank Architecture - 16 Banks (16Mb Partition) • OTP Block : Extra 256Byte block • Rea |
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Desde 2024. D4U Semiconductor.
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