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| Part Number | K8A5615EBA |
| Manufacturer | Samsung Electronics |
| Description | of range limitation of data read out during program suspend.(Refer to "Program Suspend/Resume" paragragh) Draft Date March 15, 2004 June 1, 2004 Remark Advance Preliminary 0.2 July 5, 2004 Prelim... |
| Features |
• Single Voltage, 1.7V to 1.95V for Read and Write operations • Organization - 16,772,216 x 16 bit ( Word Mode Only) • Read While Program/Erase Operation • Multiple Bank Architecture - 16 Banks (16Mb Partition) • OTP Block : Extra 256Byte block • Read Access Time (@ CL=30pF) - Asynchronous Random Access Time : 90ns (54MHz) / 80ns (66MHz) - Synchronous Random Access Time : 88.5ns (54MHz) / 70ns (66MHz) - Burst Access Time : 14.5ns (54MHz) / 11ns (66MHz) • Burst Length : - Continuous Linear Burst - Linear Burst : 8-word & 16-word with No-wrap & Wrap • Block Architecture - Eight 4Kword blocks and... |
| Document |
 K8A5615EBA Data Sheet
PDF 743.68KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K8A5615ETA |
Samsung Electronics |
Flash Memory |
|
| 2 | K8A56EBC |
Samsung semiconductor |
256Mb C-die NOR FLASH |
|
| 3 | K8A56ETC |
Samsung semiconductor |
256Mb C-die NOR FLASH |
|
| 4 | K8A56EZC |
Samsung semiconductor |
256Mb C-die NOR FLASH |
|
| 5 | K8A50D |
Toshiba |
Silicon N-Channel MOSFET |
|
| 6 | K8A55DA |
Toshiba |
TK8A55DA |
|
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