Samsung Electronics K7B Hoja de datos

No.	parte #	Fabricante	Descripción	Hoja de Datos
1	K7B163635B	Samsung Electronics	512Kx36 & 1Mx18 Synchronous SRAM • Synchronous Operation. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip Address and Control Registers. • VDD= 2.5 or 3.3V +/- 5% Power Supply. • 5V Tolerant Inputs Except I/O Pins. • Byte Writable Function. • Global Write Enable Contr
2	K7B161835B	Samsung Electronics	512Kx36 & 1Mx18 Synchronous SRAM • Synchronous Operation. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip Address and Control Registers. • VDD= 2.5 or 3.3V +/- 5% Power Supply. • 5V Tolerant Inputs Except I/O Pins. • Byte Writable Function. • Global Write Enable Contr