K7B163635B |
Part Number | K7B163635B |
Manufacturer | Samsung Electronics |
Description | The K7B163635B and K7B161835B are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 512K(... |
Features |
• Synchronous Operation. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip Address and Control Registers. • VDD= 2.5 or 3.3V +/- 5% Power Supply. • 5V Tolerant Inputs Except I/O Pins. • Byte Writable Function. • Global Write Enable Controls a full bus-width write. • Power Down State via ZZ Signal. • LBO Pin allows a choice of either a interleaved burst or a linear burst. • Three Chip Enables for simple depth expansion with No Data Contention only for TQFP. • Asynchronous Output Enable Control. • ADSP, ADSC, ADV Burst Control Pins. • TTL-Level Three-State Output. • 100-TQFP-1420A (... |
Document |
K7B163635B Data Sheet
PDF 424.73KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | K7B163625A |
Samsung semiconductor |
512Kx36 & 1Mx18 Synchronous SRAM | |
2 | K7B161825A |
Samsung semiconductor |
512Kx36 & 1Mx18 Synchronous SRAM | |
3 | K7B161835B |
Samsung Electronics |
512Kx36 & 1Mx18 Synchronous SRAM | |
4 | K7B321825M |
Samsung semiconductor |
1Mx36 & 2Mx18 Synchronous SRAM | |
5 | K7B321835C |
Samsung semiconductor |
1Mx36 & 2Mx18 Synchronous SRAM | |
6 | K7B323625M |
Samsung semiconductor |
1Mx36 & 2Mx18 Synchronous SRAM |