No. | parte # | Fabricante | Descripción | Hoja de Datos |
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STMicroelectronics |
STW34NB20 Type www.DataSheet4U.com STW34NB20 Figure 1. Package RDS(on) < 0.075 Ω ID 34 A VDSS 200 V STW34NB20 FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.062 Ω ■ ■ ■ ■ EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order codes VDS @TJ max. RDS(on) max. ID STB34NM60ND STF34NM60ND STP34NM60ND 650 V 0.110 Ω 29 A STW34NM60ND • The world’s best RDS(on) in TO-220 amongst the fast recovery diode devices • 100% avalanche tested • Low input capacitance and gate c |
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STMicroelectronics |
N-channel Power MOSFET Order codes VDS @ TJmax STB34N65M5 STI34N65M5 STP34N65M5 710 V STW34N65M5 RDS(on) max 0.11 Ω ID 28 A • Worldwide best RDS(on) * area • Higher VDSS rating and high dv/dt capability • Excellent switching performance • 100% avalanche tested App |
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