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STMicroelectronics |
STW11NB80 er V DS V DGR VGS ID ID IDM ( •) Ptot Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at |
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STMicroelectronics |
16 Mbit Low Voltage Single Supply Flash Memory 20mm Figure 1. Logic Diagram VCC 21 A0-A20 8 DQ0-DQ7 W E M29W116BT M29W116BB G RB RP VSS AI02972 July 1999 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change withou |
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STMicroelectronics |
STW11NB80 V GS ID ID I DM ( • ) P tot dv/dt( 1 ) Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulse |
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STMicroelectronics |
N-CHANNEL Power MOSFET Order codes VDSS RDS(on) max RDS(on)*Qg ID STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80 < 0.40 Ω 14Ω*nC 11 A ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Swi |
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STMicroelectronics |
STW11NK100Z Type VDSS (@Tjmax) RDS(on) ID Pw STW11NK100Z 1000 V < 1.38 Ω 8.3 A 230W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatibility Description Th |
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STMicroelectronics |
STW11NK90Z Type STW11NK90Z ■ ■ ■ ■ ■ VDSS 900V RDS(on) <0.98Ω ID 9.2A Pw 200W 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeability TO-247 Description The SuperMESH™ |
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STMicroelectronics |
16 Mbit Low Voltage Single Supply Flash Memory 20mm Figure 1. Logic Diagram VCC 21 A0-A20 8 DQ0-DQ7 W E M29W116BT M29W116BB G RB RP VSS AI02972 July 1999 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change withou |
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STMicroelectronics |
STW11NK100Z OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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Desde 2024. D4U Semiconductor.
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