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STMicroelectronics |
SMALL SIGNAL NPN TRANSISTORS /W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) VCB = 20 V VCB = 20 V TC = 150 oC IEBO V(BR)CBO V(BR)CEO∗ V(BR)EBO VCE(sat)∗ Emitter Cut- |
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STMicroelectronics |
Transistor ■ Products are pre-selected in DC current gain Application ■ General purpose Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi |
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STMicroelectronics |
NPN Transistor ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Application ■ Power supply Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The |
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STMicroelectronics |
NPN medium power transistor ■ High current ■ Low saturation voltage ■ Complement to 2SB772 Applications ■ Voltage regulation ■ Relay driver ■ Generic switch ■ Audio power amplifier ■ DC-DC converter Description The device is a NPN transistor manufactured by using planar technol |
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STMicroelectronics |
NPN Transistor ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz t(s)Application c ■ Audio power amplifier roduDescription PThis device is a NPN transistor manufactured teusing new BiT-LA (bipolar transistor for linear amplifier) technology. The resultin |
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STMicroelectronics |
PNP MEDIUM POWER TRANSISTOR ■ High current ■ Low saturation voltage ■ Complement to 2SD882 Applications ■ Voltage regulation ■ Relay driver ■ Generic switch ■ Audio power amplifier ■ DC-DC converter Description The device is a PNP transistor manufactured by using planar Technol |
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STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • High voltage capability • Low spread of dynamic parameters • Very high switching speed Applications • Electronic ballast for fluorescent lighting (CFL) • SMPS for battery charger Description The device is manufactured using high voltage multi-epita |
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STMicroelectronics |
High voltage fast-switching NPN power transistor ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description This device is manufactured using hi |
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STMicroelectronics |
High voltage fast-switching NPN power transistor ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description This device is manufactured using hi |
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STMicroelectronics |
SMALL SIGNAL PNP TRANSISTOR |
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STMicroelectronics |
Complementary low-voltage transistor ■ Products are pre-selected in DC current gain Application ■ General purpose Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi |
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STMicroelectronics |
SMALL SIGNAL NPN TRANSISTORS /W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) VCB = 20 V VCB = 20 V TC = 150 oC IEBO V(BR)CBO V(BR)CEO∗ V(BR)EBO VCE(sat)∗ Emitter Cut- |
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STMicroelectronics |
NPN Transistor ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Application ■ Power supply Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The |
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STMicroelectronics |
SMALL SIGNAL NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICEX Collector Cut-off Current (VBE = -3 V) IBEX Base Cut-off Current (VBE = -3 V) V(BR)CEO∗ Collector-Emitter Breakdown Voltage (IB = 0) |
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STMicroelectronics |
Trench gate field-stop IGBT 6 µs of minimum short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 30 A Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control UPS P |
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STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
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STMicroelectronics |
Complementary power transistors ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio amplifier Description The devices are manufactured in planar technology with “base island” layout. The resulting transistors show |
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STMicroelectronics |
RF POWER TRANSISTORS Ldmos Enhanced Technology ion Temperature Storage Temperature Parameter Value 65 2 3 1. Drain 2. Source 3. Gate Unit V V A W °C °C -0.5 to +15 12 186 200 -65 to +150 THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 0.7 °C/W January, 28 2003 1/4 LET9085 ELECTRICA |
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STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS • Low collector-emitter saturation voltage • Complementary NPN - PNP transistors Applications • General purpose • Audio amplifier Description The devices are manufactured in planar technology with “base island” layout and are suitable for audio, powe |
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STMicroelectronics |
SMALL SIGNAL PNP TRANSISTOR |
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Desde 2024. D4U Semiconductor.
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