| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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STMicroelectronics |
STGW20NC60VD ■ High current capability ■ High frequency operation up to 50 KHz ■ Very soft ultra fast recovery antiparallel diode Description This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and |
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STMicroelectronics |
Trench gate field-stop IGBT Maximum junction temperature: TJ = 175 °C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A Tight parameters distribution Safe paralleling Low thermal resistance Applications Photovoltaic inverters Uninterruptible power sup |
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STMicroelectronics |
IGBT • IPM 8 A, 600 V, 3-phase IGBT inverter bridge including 2 control ICs for gate driving and freewheeling diodes • 3.3 V, 5 V TTL/CMOS inputs with hysteresis • Internal bootstrap diode • Undervoltage lockout of gate drivers • Smart shutdown function • |
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STMicroelectronics |
IGBT • Maximum junction temperature: TJ = 175 °C • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.55 V (typ.) @ IC = 6 A • Tight parameter distribution • Safer paralleling • Positive VCE(sat) temperature coefficient • Low thermal res |
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STMicroelectronics |
high-speed HB2 series IGBT • Maximum junction temperature : TJ = 175 °C • Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A • Co-packaged protection diode • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient Applica |
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STMicroelectronics |
STGW20NB60HD -Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 oC Derating Factor Storage T emperature Max. Operating Junction Temperature o o Value |
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STMicroelectronics |
very fast IGBT ■ ■ ■ ■ Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop freewheeling diode 1 3 1 3 2 2 Applications ■ ■ Induction cooking, microwave ovens Soft-switching applications TO-247 TO-3P Desc |
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STMicroelectronics |
Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 2.1 V (typ.) @ IC = 25 A • 5 µs minimum short circuit withstand time at TJ=150 °C • Tight parameters distribution • Safe paralleling • Low |
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STMicroelectronics |
35A 600V Ultrafast IGBT ■ Improved Eoff at elevated temperature ■ Minimal tail current ■ Low conduction losses Applications ■ Welding ■ High frequency converters ■ Power factor correction Description This Ultrafast IGBT is developed using a new planar technology to yield a |
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STMicroelectronics |
short-circuit rugged IGBT • IPM 20 A, 600 V, 3-phase IGBT inverter bridge including 2 control ICs for gate driving and freewheeling diodes • 3.3 V, 5 V TTL/CMOS inputs with hysteresis • Internal bootstrap diode • Undervoltage lockout of gate drivers • Smart shutdown function |
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STMicroelectronics |
IGBT • IPM 8 A, 600 V, 3-phase IGBT inverter bridge including 2 control ICs for gate driving and freewheeling diodes • 3.3 V, 5 V TTL/CMOS inputs with hysteresis • Internal bootstrap diode • Undervoltage lockout of gate drivers • Smart shutdown function • |
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STMicroelectronics |
Galvanically isolated 4A single gate driver • AEC-Q100 qualified • High voltage rail up to 1200 V • Driver current capability: 4 A sink/source @25°C • 100 V/ns Common Mode Transient Immunity (CMTI) • Overall input-output propagation delay: 45 ns • Rail-to-rail outputs • 4 A Miller CLAMP dedica |
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STMicroelectronics |
single SPDT switch ■ High speed: – tPD = 1.5ns (Typ.) at VCC = 3.0V – tPD = 1.5ns (Typ.) at VCC = 2.3V Ultra low power dissipation: – ICC = 0.2µA (Max.) at TA = 85°C Low "ON" resistance: – RON = 1.0Ω (TA = 25ºC) at VCC = 4.3V – RON = 1.1Ω (TA = 25ºC) at VCC = 3.0V – R |
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STMicroelectronics |
dual SPST switch ■ Low quiescent supply current: Max ± 50µA for V1IN, V2IN = 1.80V at VCC = 4.3V Ultra low power dissipation: ICC = 0.2µA (Max) at TA = 85°C, VIN = 0V Switch: low "ON" resistance: – RON = 0.7Ω (Max TA = 25°C) at VCC = 4.3V – RON = 0.7Ω (Max TA = 25°C |
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STMicroelectronics |
short circuit rugged IGBT ■ ■ ■ Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs 3 1 1 3 2 Applications ■ ■ High frequency inverters Motor drivers D²PAK TO-220 Description This IGBT utilizes the |
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STMicroelectronics |
ultra fast IGBT ■ ■ High frequency operation Lower CRES / CIES ratio (no cross-conduction susceptibility) 2 1 3 1 2 3 Applications ■ ■ High frequency motor controls, inverters, ups HF, SMPS and PFC in both hard switch and resonant topologies TO-247 3 1 TO-220 |
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STMicroelectronics |
3-phase inverter bridge IGBT • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes • Optimized for low electromagnetic interferences • VCE(sat) negative temperature coefficient • 3.3 V, 5 V, 15 V CMOS/TTL input comparators |
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STMicroelectronics |
IGBT Maximum junction temperature: TJ = 175 °C Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 40 A Tight parameter distribution Co-packed diode for protection Safe paralleling Low thermal resistance Applications Power factor correct |
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STMicroelectronics |
Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photo |
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STMicroelectronics |
N-channel Power MOSFET Order code STT6N3LLH6 VDSS RDS(on) max ID PTOT 0.025 Ω (VGS= 10 V) 30 V 6 A 1.6 W 0.036 Ω (VGS= 4.5 V) • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • High avalanche ruggedness • Low gate drive power losses Figure |
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Desde 2024. D4U Semiconductor.
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