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STGD6M65DF2 |
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| Part Number | STGD6M65DF2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system pe... |
| Features |
• Maximum junction temperature: TJ = 175 °C • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.55 V (typ.) @ IC = 6 A • Tight parameter distribution • Safer paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Soft and very fast-recovery antiparallel diode Applications • Industrial motor control • PFC converters, single phase input • Uninterruptable power supplies (UPS) Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an opt... |
| Document |
 STGD6M65DF2 Data Sheet
PDF 885.14KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
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| 2 | STGD6NC60HD |
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| 3 | STGD6NC60HDT4 |
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| 4 | STGD10HF60KD |
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| 5 | STGD10NC60H |
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| 6 | STGD10NC60HD |
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| 7 | STGD10NC60K |
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| 8 | STGD10NC60KD |
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| 9 | STGD10NC60KDT4 |
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| 10 | STGD10NC60S |
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Desde 2024. D4U Semiconductor.
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