| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR e (e) Pulse width limited by safe operating area June 1988 5 50 50 ±20 7 4.4 28 28 50 0.4 -65 to 150 150 V V V A A A A W W/oC °C °C 1/5 505 SGSP358 THERMAL DATA Rthj _case Thermal resistance junction-case TL Maximum lead temperature for sol |
|
|
|
|
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ent (pulsed) Drain inductive current, clamped Total dissipation at Tc < 2 5 °C Derating factor Storage temperature Max. operating junction temperature (*) Pulse width limited by safe operating area June 1988 100 100 ±20 2.0 1 .2 6 6 18 0.144 - 6 5 |
|
|
|
|
STMicroelectronics |
N-Channel MOSFET erature Max. operating junction temperature (e) Pulse width limited by safe operating area June 1988 s 450 450 ±20 2.5 1.5 10 10 50 0.4 -65 to 150 150 V V V A A A A W W/oC °C °C 1/5 445 SGSP230 THERMAL DATA Rthj . case Thermal resistance junc |
|
|
|
|
STMicroelectronics |
N-Channel MOSFET ng area June 1988 5 50 50 ±20 10 6.3 40 40 50 0.4 - 65 to 150 150 V V V A A A A W W/oC °C °C 1/5 439 SGSP222 THERMAL DATA Rthj _case Thermal resistance junction-case TL Maximum lead temperature for soldering purpose max 2.5 275 ELECTRICA |
|
|
|
|
STMicroelectronics |
N-Channel MOSFET Derating factor T stg Storage temperature Tj Max. operating junction temperature (e) Pulse width limited by safe operating area June 1988 5 100 100 ±20 2.0 1.2 6 6 18 0.144 -65 to 150 150 V V V A A A A W W/oC °C °C 1/5 SGSP201 THERMAL DA |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS n current (pulsed) Total dissipation at Tc <25°C Derating factor Storage temperature Max. operating junction temperature (e) Pulse width limited by safe operating area • Introduced in 1988 week 44 June 1988 SGSP591 SGSP592 60 50 V 60 50 V |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS n current (pulsed) Total dissipation at Tc <25°C Derating factor Storage temperature Max. operating junction temperature (e) Pulse width limited by safe operating area • Introduced in 1988 week 44 June 1988 SGSP591 SGSP592 60 50 V 60 50 V |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS e Max. operating junction temperature (e) Pulse width limited by safe operating area June 1988 500 500 ±20 9 5.6 36 36 150 1.2 -65 to 150 150 V V V A A A A W W/oC °C °C 1/5 589 SGSP579 THERMAL DATA Rthj _ case Thermal resistance junction-case |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOS TRANSISTORS ion temperature (e) Pulse width limited by safe operating area • Introduced in 1989 week 1 June 1988 100 100 ±20 11 7 30 75 0.6 -65 to 150 150 V V V A A A W W/oC °C °C 1/5 463 SGSP311 THERMAL DATA Rthj _case Thermal resistance junction-case |
|
|
|
|
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ature (*) Pulse width limited by safe operating area June 1988 400 400 ±20 0.6 0.4 1 .2 1.2 18 0.14 - 6 5 to 150 150 V V V A A A A W W /°C °C °C 1/5 SGSP341 THERMAL DATA Rthj . Case Thermal resistance junction-case TL Maximum lead temperatur |
|
|
|
|
STMicroelectronics |
Complementary power Darlington transistors ■ Complementary NPN - PNP transistors ■ Monolithic Darlington configuration Applications ■ Audio power amplifier ■ DC-AC converter ■ Easy driver for low voltage DC motor ■ General purpose switching applications Description The SGSD100 is an epitaxial |
|
|
|
|
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) o T otal Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction T emperature 1200 600 7 7 12 5 8 40 -65 to 150 150 50 Valu e SGSIF 444 V |
|
|
|
|
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR unction T emperature Valu e 1200 600 7 7 12 5 8 40 -65 to 150 150 Un it V V V A A A A W o C o C February 1999 1/6 SGSIF344FP THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 3.12 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unle |
|
|
|
|
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) o T otal Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction T emperature 1200 600 7 7 12 5 8 40 -65 to 150 150 50 Valu e SGSIF 444 V |
|
|
|
|
STMicroelectronics |
N-Channel MOSFET BSOLUTE MAXIMUM RATINGS VDS VDGR VGS 10 10 10M Ptot Tstg Tj VISO Drain-source voltage (VGS =0) Drain-gate voltage (RGS =20 KO) Gate-source voltage Drain current (cont.) at Tc =25°C Drain current (cont.) at Tc =100°C Drain current (pulsed) Total dis |
|
|
|
|
STMicroelectronics |
N-Channel MOSFET ABSOWTE MAXIMUM RATINGS Vos VOGR VGS 10 10 10M Ptot Tstg Tj Visa Drain-source voltage (VGS =0) Drain-gate voltage (RGS =20 KO) Gate-source voltage Drain current (cont.) at Tc =25°C Drain current (cont.) at Tc =100°C Drain current (pulsed) Total di |
|
Desde 2024. D4U Semiconductor.
|