SGSIF444 |
Part Number | SGSIF444 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | The SGSIF344 and SGSIF444 are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. These transistors a... |
Features |
0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) o T otal Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction T emperature 1200 600 7 7 12 5 8 40 -65 to 150 150 50 Valu e SGSIF 444 V V V A A A A W
o o
Un it
C C 1/7
SGSIF344 / SGSIF444
THERMAL DATA
ISOW AT T220 ISOW AT T218 R t hj-ca se Thermal Resistance Junction-case Max 3.12 2.5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IB = 0) Emit... |
Document |
SGSIF444 Data Sheet
PDF 90.46KB |
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