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STMicroelectronics |
35A 600V Ultrafast IGBT ■ Improved Eoff at elevated temperature ■ Minimal tail current ■ Low conduction losses Applications ■ Welding ■ High frequency converters ■ Power factor correction Description This Ultrafast IGBT is developed using a new planar technology to yield a |
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STMicroelectronics |
ultra fast IGBT ■ ■ High frequency operation Lower CRES / CIES ratio (no cross-conduction susceptibility) 2 1 3 1 2 3 Applications ■ ■ High frequency motor controls, inverters, ups HF, SMPS and PFC in both hard switch and resonant topologies TO-247 3 1 TO-220 |
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STMicroelectronics |
IGBT • Designed for automotive applications and AEC-Q101 qualified • Low threshold voltage • Low on-voltage drop • High voltage clamping feature • Logic level gate charge • ESD gate-emitter protection • Gate and gate-emitter integrated resistors Applicati |
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STMicroelectronics |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT CHING AND RESONANT TOPOLOGIES s “D” Version ORDERING INFORMATION SALES TYPE STGP3NB60K STGD3NB60KT4 STGP3NB60KD STGP3NB60KDFP STGB3NB60KDT4 MARKING GP3NB60K GD3NB60K GP3NB60KD GP3NB60KDFP GB3NB60KD PACKAGE TO-220 DPAK TO-220 TO-220FP D2PAK PACKAGIN |
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STMicroelectronics |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT CHING AND RESONANT TOPOLOGIES s “D” Version ORDERING INFORMATION SALES TYPE STGP3NB60K STGD3NB60KT4 STGP3NB60KD STGP3NB60KDFP STGB3NB60KDT4 MARKING GP3NB60K GD3NB60K GP3NB60KD GP3NB60KDFP GB3NB60KD PACKAGE TO-220 DPAK TO-220 TO-220FP D2PAK PACKAGIN |
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STMicroelectronics |
N-CHANNEL PowerMESH IGBT IC Collector Current (continuous) at Tc = 25 oC IC Collector Current (continuous) at Tc = 100 oC ICM( •) Collector Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor Ts tg Storage T emperature Tj Max. O perating Junct ion T emperat |
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STMicroelectronics |
IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coeffi |
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STMicroelectronics |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT CHING AND RESONANT TOPOLOGIES s “D” Version ORDERING INFORMATION SALES TYPE STGP3NB60K STGD3NB60KT4 STGP3NB60KD STGP3NB60KDFP STGB3NB60KDT4 MARKING GP3NB60K GD3NB60K GP3NB60KD GP3NB60KDFP GB3NB60KD PACKAGE TO-220 DPAK TO-220 TO-220FP D2PAK PACKAGIN |
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STMicroelectronics |
short circuit rugged IGBT ■ ■ ■ Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs 3 1 1 3 2 Applications ■ ■ High frequency inverters Motor drivers D²PAK TO-220 Description This IGBT utilizes the |
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STMicroelectronics |
Trench gate field-stop IGBT • 6 µs of short-circuit withstand time • VCE(sat) = 1.55 V (typ.) @ IC = 30 A • Tight parameters distribution • Safer paralleling • Low thermal resistance • Soft and very fast recovery antiparallel diode Applications • Motor control • UPS • PFC Descr |
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STMicroelectronics |
Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photo |
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STMicroelectronics |
IGBT ■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no cross conduction susceptibility) ) ■ Short circuit withstand time 10 µs ct(sApplications du ■ High frequency inverters ro ■ Motor drivers te PDescription oleThis IGBT utilizes the advanced P |
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STMicroelectronics |
IGBT ■ High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) t(s)Applications uc ■ High frequency motor controls, inverters, ups d ■ HF, SMPS and PFC in both hard switch and roresonant topologies te PDescription oleThis I |
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STMicroelectronics |
IGBT • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photo |
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STMicroelectronics |
30A high speed trench gate field-stop IGBT • High speed switching • Tight parameters distribution • Safe paralleling • Low thermal resistance • Short circuit rated • Ultrafast soft recovery antiparallel diode 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram C (2, TAB) G (1) |
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STMicroelectronics |
Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution • Safe paralleling • Low thermal resistance Applications • Photovoltaic inverters • Uninterruptible power sup |
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STMicroelectronics |
IGBT ■ Optimized performance for medium operating frequencies up to 5 kHz in hard switching ■ Low on-voltage drop (VCE(sat)) ■ High current capability Application Motor drive Description This device utilizes the advanced PowerMESH™ process resulting in an |
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STMicroelectronics |
IGBT ■ High voltage capability ■ High speed ■ Very soft ultrafast recovery anti-parallel diode Applications ■ Home appliance ■ Lighting Description This high voltage and very fast IGBT shows an excellent trade-off between low conduction losses and fast sw |
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STMicroelectronics |
STGP3NB60F NG AND RESONANT TOPOLOGIES Std. Version “D” Version ORDERING INFORMATION SALES TYPE STGP3NB60F STGD3NB60FT4 STGP3NB60FD STGF3NB60FD STGB3NB60FDT4 MARKING GP3NB60F GD3NB60F GP3NB60FD GF3NB60FD GB3NB60FD PACKAGE TO-220 DPAK TO-220 TO-220FP D2PAK PACKA |
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STMicroelectronics |
IGBT |
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Desde 2024. D4U Semiconductor.
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