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STGP30M65DF2 |
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| Part Number | STGP30M65DF2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to ma... |
| Features |
• 6 µs of short-circuit withstand time • VCE(sat) = 1.55 V (typ.) @ IC = 30 A • Tight parameters distribution • Safer paralleling • Low thermal resistance • Soft and very fast recovery antiparallel diode Applications • Motor control • UPS • PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperatu... |
| Document |
 STGP30M65DF2 Data Sheet
PDF 524.32KB |
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Desde 2024. D4U Semiconductor.
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