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STMicroelectronics GP2 DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
STGP20NC60V

STMicroelectronics
very fast IGBT



■ High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility) High current capability 1 2 3 1 2 3 Applications


■ TO-247 3 1 TO-220 High frequency inverters UPS, motor drivers HF, SMPS and PFC in bot
Datasheet
2
STGP20H60DF

STMicroelectronics
600V 20A high speed trench gate field-stop IGBT

• High speed switching
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Short-circuit rated
• Ultrafast soft recovery antiparallel diode Applications
• Motor control
• UPS, PFC Figure 1. Internal schematic diagram Descr
Datasheet
3
STGP20V60DF

STMicroelectronics
600V 20A very high speed trench gate field-stop IGBT

• Maximum junction temperature: TJ = 175 °C
• Very high speed switching series 3 2 1 1 3
• Tail-less switching off
• Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resis
Datasheet
4
GP20NC60V

STMicroelectronics
very fast IGBT

• High frequency operation up to 50 kHz
• Lower CRES / CIES ratio (no cross-conduction susceptibility)
• High current capability Applications
• High frequency inverters
• UPS, motor drivers
• HF, SMPS and PFC in both hard switch and resonant topologi
Datasheet
5
GP20V60DF

STMicroelectronics
IGBT

• Maximum junction temperature: TJ = 175 °C
• Very high speed switching series
• Tail-less switching off
• Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Very
Datasheet
6
STGP20M65DF2

STMicroelectronics
low-loss IGBT

• High short-circuit withstand time
• VCE(sat) = 1.55 V (typ.) @ IC = 20 A
• Tight parameters distribution
• Safer paralleling
• Low thermal resistance
• Soft and very fast recovery antiparallel diode G(1) C(2, TAB) Applications
• Motor control
Datasheet
7
STGP20IH65DF

STMicroelectronics
IGBT

• Designed for soft-commutation
• Maximum junction temperature: TJ = 175 °C
• VCE(sat) = 1.55 V (typ.) @ IC = 20 A
• Minimized tail current
• Tight parameter distribution
• Low thermal resistance
• Low drop voltage freewheeling co-packaged diode
• Po
Datasheet



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