STGP20M65DF2 |
Part Number | STGP20M65DF2 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inver... |
Features |
• High short-circuit withstand time • VCE(sat) = 1.55 V (typ.) @ IC = 20 A • Tight parameters distribution • Safer paralleling • Low thermal resistance • Soft and very fast recovery antiparallel diode G(1) C(2, TAB) Applications • Motor control • UPS • PFC • General-purpose inverters Description E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is ess... |
Document |
STGP20M65DF2 Data Sheet
PDF 515.89KB |
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