STMicroelectronics GP1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	GP10NC60KD	STMicroelectronics	short-circuit rugged IGBT ■ Lower on voltage drop (VCE(sat)) ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode ■ Short-circuit withstand time 10µs Description This IGBT utilizes the advanced PowerMESH™ process re
2	STGP18N40LZ	STMicroelectronics	Automotive-grade 390V internally clamped IGBT • Designed for automotive applications and AEC-Q101 qualified • 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Low saturation voltage • High pulsed cu
3	STGP10NC60KD	STMicroelectronics	600V short-circuit rugged IGBT • Lower on voltage drop (VCE(sat)) • Lower Cres / Cies ratio (no cross-conduction susceptibility) • Very soft ultra fast recovery antiparallel diode • Short-circuit withstand time 10 μs Applications • High frequency motor controls • SMPS and
4	STGP19NC60W	STMicroelectronics	19 A - 600 V - ultra fast IGBT ■ High frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptibility) Applications ■ High frequency motor controls, inverters, UPS ■ HF, SMPS and PFC in both hard switch and resonant topologies Description This IGBT utilizes the adv
5	GP10NB37LZ	STMicroelectronics	internally clamped IGBT ■ Low threshold voltage ■ Low on-voltage drop ■ Low gate charge ■ High current capability ■ High voltage clamping feature Applications ■ Automotive ignition Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trad
6	STGP100N30	STMicroelectronics	Fast IGBT ■ ■ ■ ■ ■ Optimized for sustain and energy recovery circuits in PDP applications. State-of-the-art STripFET™ technology Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) Very low-on voltage drop (VCE(sat)) and energy per pulse for improv
7	GP10NB60SD	STMicroelectronics	low drop IGBT ■ Low on-voltage drop (VCE(sat)) ■ High current capability ■ Very soft ultra fast recovery antiparallel diode Applications ■ Light dimmer ■ Static relays ■ Motor drive Description This IGBT utilizes the advanced Power MESH™ process featuring extremel
8	STGP19NC60S	STMicroelectronics	600 V fast IGBT ■ Very low on-voltage drop (VCE(sat)) ■ Minimum power losses at 5 kHz in hard switching ■ Optimized performance for medium operating frequencies. Application Medium frequency motor drives Description This IGBT utilizes the advanced PowerMESH™ process
9	STGP19NC60H	STMicroelectronics	19 A - 600 V - very fast IGBT ■ Low on-voltage drop (VCE(sat)) ■ High input impedance (voltage driven) Applications ■ High frequency motor controls ■ SMPS and PFC in both hard switch and resonant topologies Description This IGBT utilizes the advanced PowerMESH™ process resulting
10	STGP19NC60SD	STMicroelectronics	600 V fast IGBT ■ Very low on-voltage drop (VCE(sat)) ■ Minimum power losses at 5 kHz in hard switching ■ Optimized performance for medium operating frequencies. ■ IGBT co-packaged with Ultrafast freewheeling diode Application Medium frequency motor drives Descripti
11	STGP15H60DF	STMicroelectronics	Trench gate field-stop IGBT • High speed switching • Tight parameters distribution • Safe paralleling • Low thermal resistance • Short-circuit rated • Ultrafast soft recovery antiparallel diode Applications • Motor control • UPS, PFC Description These devices are IGBTs develope
12	STGP10M65DF2	STMicroelectronics	Trench gate field-stop IGBT  6 µs of short-circuit withstand time  VCE(sat) = 1.55 V (typ.) @ IC = 10 A  Tight parameter distribution  Safer paralleling  Low thermal resistance  Soft and very fast recovery antiparallel diode Applications  Motor control  UPS  PFC Descri
13	GP10HF60KD	STMicroelectronics	short-circuit rugged IGBT ■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction )susceptibility) t(s ■ Tight parameter distribution uc ■ Ultrafast soft-recovery antiparallel diode d ■ Short-circuit rugged P
14	GP10NB60S	STMicroelectronics	low drop IGBT ■ Low on-voltage drop (VCE(sat)) ■ High current capability Applications ■ Light dimmer ■ Static relays ■ Motor drive Description This IGBT utilizes the advanced PowerMESH™ process featuring extremely low on-state voltage drop in low-frequency working
15	GP18N40LZ	STMicroelectronics	Automotive-grade 390V internally clamped IGBT • Designed for automotive applications and AEC-Q101 qualified • 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Low saturation voltage • High pulsed cu
16	GP10NC60S	STMicroelectronics	fast IGBT ■ Optimized performance for medium operating frequencies up to 5 kHz in hard switching TAB ■ Low on-voltage drop (VCE(sat)) t(s)Application uc ■ Motor drive rodDescription te PThis IGBT utilizes the advanced PowerMESH™ process resulting in an exce
17	GP100N30	STMicroelectronics	IGBT ■ Optimized for sustain and energy recovery circuits in PDP applications. ■ State-of-the-art STripFET™ technology ■ Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) 3 2 1 TO-220FP 3 2 1 TO-247 ■ Very low-on voltage drop (VCE(sat)) a
18	GP19NC60H	STMicroelectronics	very fast IGBT ■ Low on-voltage drop (VCE(sat)) ■ High frequency operation t(s)Applications c ■ High frequency motor drives u ■ SMPS and PFC in both hard switch and dresonant topologies ProDescription leteThis IGBT utilizes the advanced PowerMESH™ oprocess resulti
19	GP19NC60HD	STMicroelectronics	very fast IGBT • Low on-voltage drop (VCE(sat)) • Very soft ultrafast recovery anti-parallel diode Applications • High frequency motor drives • SMPS and PFC in both hard switch and resonant topologies Description These devices are ultrafast IGBT. They utilize the a
20	GP19NC60KD	STMicroelectronics	600V short-circuit rugged IGBT ■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with Ultrafast free-wheeling diode Applications ■ High frequency inverters ■ Motor drivers Descripti