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GP19NC60KD |
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| Part Number | GP19NC60KD |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Datasheet − production data 3 2 1 TO-220 3 1 D²PAK 3... |
| Features |
■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with Ultrafast free-wheeling diode Applications ■ High frequency inverters ■ Motor drivers Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Datasheet − production data 3 2 1 TO-220 3 1 D²PAK 3 2 1 TO-220FP Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGB19NC60KDT4 GB19NC60KD STGF19NC60KD STGP19N... |
| Document |
 GP19NC60KD Data Sheet
PDF 1.03MB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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