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STMicroelectronics |
Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode 3 2 1 TO-3P Figure 1 |
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STMicroelectronics |
High voltage half-bridge gate driver • dV/dt immunity ±200 V/ns • Driver current capability: – 1.3/2.4 A source/sink typ @ 25 °C, 6 V – 5.5/6 A source/sink typ @ 25 °C, 15 V • Separated turn on and turn off gate driver pins • 45 ns propagation delay with tight matching • 3.3 V, 5 V TTL/ |
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STMicroelectronics |
High voltage half-bridge gate driver • dV/dt immunity ±200 V/ns • Driver current capability: – 1.3/2.4 A source/sink typ @ 25 °C, 6 V – 5.5/6 A source/sink typ @ 25 °C, 15 V • Separated turn on and turn off gate driver pins • 45 ns propagation delay with tight matching • 3.3 V, 5 V TTL/ |
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STMicroelectronics |
IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Very low saturation voltage: VCE(sat) = 1.65 V (typ) @ IC = 60 A • Safe paralleling • Tight parameter distribution Applications • Solar • We |
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Desde 2024. D4U Semiconductor.
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