Busque con el número de pieza junto con el fabricante o la descripción
G60V60DF |
Click to view a larger image
| Part Number | G60V60DF |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IGBTs, which represents an optimum compromise between conduc... |
| Features |
• Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode 3 2 1 TO-3P Figure 1. Internal schematic diagram C (2 or TAB) Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters G (1) E (3) Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IG... |
| Document |
 G60V60DF Data Sheet
PDF 1.54MB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
|