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STMicroelectronics |
N-channel Power MOSFET Type STD18NF03L VDSS 30V RDS(on) <0.05Ω ■ Exceptional dv/dt capability ■ Low gate charge at 100°C ■ Application oriented characterization ■ 100% avalanche tested ID 17A Description This Power MOSFET is the latest development of STMicroelectroni |
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STMicroelectronics |
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 150 60 7 5 10 2 15 -65 to 150 150 Unit V V V A A |
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STMicroelectronics |
MD1803DFX ■ ■ ■ ■ ■ ■ ■ State-of-the-art technology: – Diffused collector “enhanced generation” More stable performance versus operating temperature variation Low base drive requirement Tighter hFE range at operating collector current Fully insulated power pa |
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STMicroelectronics |
Power MOSFET Order code STD18NF03L VDS 30 V RDS(on) max. < 50 mΩ ID 17 A • AEC-Q101 qualified • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge Applications G(1) • Switching applications S(3) Description AM01475v1_noZen This Power |
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STMicroelectronics |
Power supply ■ Synchronous step-up converter ■ Input voltage range from 2.5 V to 5.5 V ■ Maximum output current 120 mA ■ Efficiency: 75 % at IO = 10 mA - 30 mA; 85 % at IO = 30 mA - 120 mA ■ Switching at 1.2 MHz in typical application conditions ■ Enable pin for |
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STMicroelectronics |
N-channel Power MOSFET TAB 23 1 DPAK D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STD18N55M5 600 V 192 mΩ 16 A • Extremely low RDS(on) • Low gate charge and input capacitance • Excellent switching performance • 100% avalanche tested Applications G(1) |
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STMicroelectronics |
N-Channel Power MOSFET TAB 23 1 DPAK D(2, TAB) Order code VDS RDS(on) max. ID STD18N60M6 600 V 280 mΩ 13 A • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected G(1) |
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STMicroelectronics |
Automotive-grade 390V internally clamped IGBT TAB 23 1 DPAK C (2 or TAB) RG G (1) • AEC-Q101 qualified • SCIS energy of 180 mJ @ TC = 150 °C, L = 3 mH • Parts are 100% tested in SCIS • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Very low satura |
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STMicroelectronics |
Automotive-grade 390V internally clamped IGBT • Designed for automotive applications and AEC-Q101 qualified • 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Low saturation voltage • High pulsed cu |
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STMicroelectronics |
Low voltage fast-switching NPN power transistor ■ ■ ■ ■ Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting DPAK (TO-252) power package in tape & reel (suffix “T4) 3 1 TO-252 DPAK (suffix “T4”) Description The device is manufac |
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STMicroelectronics |
N-channel Power MOSFET Order codes STB18N65M5 STD18N65M5 ■ ■ ■ ■ VDSS @ TJmax 710 V RDS(on) max < 0.22 Ω ID 15 A TAB TAB 2 3 1 2 3 1 Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt capability Excellent switching performance 100% avalanche tested Figu |
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STMicroelectronics |
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
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STMicroelectronics |
Low voltage fast-switching NPN power transistor ■ This device is qualified for automotive application ■ Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed ■ Surface-mounting DPAK (TO-252) power package in tape & reel (suffix “T4) Description |
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STMicroelectronics |
Automotive-grade 390V internally clamped IGBT • Designed for automotive applications and AEC-Q101 qualified • 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Low saturation voltage • High pulsed cu |
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STMicroelectronics |
N-channel Power MOSFET Order code STD180N4F6 VDS 40 V RDS(on) max. 2.8 mΩ ID 80 A PTOT 130 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Power tools Description This d |
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STMicroelectronics |
High voltage NPN Power transistor ■ ■ ■ ■ ■ ■ State-of-the-art technology: – Diffused collector “enhanced generation” Stable performance versus operating temperature variation Low base drive requirement Tight hFE range at operating collector current Fully insulated power package UL |
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Desde 2024. D4U Semiconductor.
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