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GD18N40LZ |
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| Part Number | GD18N40LZ |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The devic... |
| Features |
• Designed for automotive applications and AEC-Q101 qualified • 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Low saturation voltage • High pulsed current capability • Gate and gate-emitter resistor Figure 1. Internal schematic diagram C (2 or TAB) Application • Pencil coil electronic ignition driver G (1) RG RGE Description This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage p... |
| Document |
 GD18N40LZ Data Sheet
PDF 858.10KB |
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Desde 2024. D4U Semiconductor.
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