STMicroelectronics BUV Hoja de datos

No.	parte #	Fabricante	Descripción
1	BUV20	STMicroelectronics	HIGH CURRENT NPN SILICON TRANSISTOR A W o o C C January 2000 1/4 BUV20 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.7 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX I CEO I EBO Parameter Collector Cut-off Current (V BE =
2	BUV28	STMicroelectronics	SILICON NPN SWITCHING TRANSISTOR CS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEX I EBO Parameter Collector Cut-off Current (R BE = 5 0Ω ) Collector Cut-off Current Emitter Cut-off Current (I C = 0) Test Conditions V CE = 400V T c = 125 C V CE = 400V VBE = -1.5V T c
3	BUV27	STMicroelectronics	MEDIUM POWER NPN SILICON TRANSISTOR
4	BUV48A	STMicroelectronics	High voltage fast switching NPN power transistor ■ High current capability ■ Fast switching speed Applications ■ Switching mode power supplies ■ Flyback and forward single transistor low power converter Description The device is a multiepitaxial mesa NPN transistor mounted in TO-247 plastic package
5	BUV48AFI	STMicroelectronics	HIGH POWER NPN SILICON TRANSISTORS BE = 10 Ω ) Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Collector Peak Current non repetitive (t p <20 µ s) Base Current Base Peak Current Total Dis
6	BUV48C	STMicroelectronics	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS ) TO-3 Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value 1200 1200 700 7 15 30 55 4 20 TO -218 125 150 ISOW ATT 218 55 -65 to 150 150 175 200 Un it V V V V A A A A A W o o -65 to 200 -65 to 150 C C 1
7	BUV61	STMicroelectronics	HIGH POWER NPN SILICON TRANSISTOR L DATA R thj-case Thermal Resistance Junction-case Max 0.7 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEV Parameter Collector Cut-off Current (R BE = 10 Ω ) Collector Cut-off Current (V BE = -1.5V) Em
8	BUV26	STMicroelectronics	MEDIUM POWER NPN SILICON TRANSISTOR unction-case Max 1.76 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEX I EBO Parameter Collector Cut-off Current (R BE = 5 0Ω ) Collector Cut-off Current Emitter Cut-off Current (I C = 0) Test Condition
9	BUV298AV	STMicroelectronics	NPN TRANSISTOR POWER MODULE
10	BUV298V	STMicroelectronics	NPN TRANSISTOR POWER MODULE ■ NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ) ■ Specific accidental overload areas t(s ■ Fully insulated package (U.L. compliant) for ceasy mounting du ■ Low internal parasitic inductance ro ■ In compliance with t
11	BUV46	STMicroelectronics	HIGH VOLTAGE NPN SILICON POWER TRANSISTORS January 1999 1/4 BUV46 / BUV46A THERMAL DATA R thj-case Thermal Resistance Junction-Case Max 1.76 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEX I EBO Parameter Collector Cut-off Current (R BE = 10
12	BUV46A	STMicroelectronics	HIGH VOLTAGE NPN SILICON POWER TRANSISTORS January 1999 1/4 BUV46 / BUV46A THERMAL DATA R thj-case Thermal Resistance Junction-Case Max 1.76 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEX I EBO Parameter Collector Cut-off Current (R BE = 10
13	BUV48CFI	STMicroelectronics	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS ) TO-3 Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value 1200 1200 700 7 15 30 55 4 20 TO -218 125 150 ISOW ATT 218 55 -65 to 150 150 175 200 Un it V V V V A A A A A W o o -65 to 200 -65 to 150 C C 1
14	BUV98AV	STMicroelectronics	NPN TRANSISTOR POWER-MODULE
15	BUV98V	STMicroelectronics	NPN Transistor Power-Module With Conductive Grease Applied o Max Max 0.83 0.05 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol I CER ICEV I EBO Parameter Collecto r Cut-of f Current (RBE = 5 Ω ) Collecto r Cut-of f Current (VBE = -5