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STMicroelectronics |
STGW20NB60HD -Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 oC Derating Factor Storage T emperature Max. Operating Junction Temperature o o Value |
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STMicroelectronics |
STW16NB60 ate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature |
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STMicroelectronics |
N-CHANNEL 6A - 600V - DPAK PowerMESH IGBT PE & REEL September 2003 1/10 www.DataSheet4U.com STGD3NB60HD ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM ( ) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STB60NF06LT4 VDS 60 V RDS(on) max. 0.014 Ω ID 60 A PTOT 110 W 3 1 D2PAK Figure 1: Internal schematic diagram D(2, TAB) • Designed for automotive applications and AEC-Q101 qualified • Exceptional dv/dt capability • 100% avalanche test |
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STMicroelectronics |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT CHING AND RESONANT TOPOLOGIES s “D” Version ORDERING INFORMATION SALES TYPE STGP3NB60K STGD3NB60KT4 STGP3NB60KD STGP3NB60KDFP STGB3NB60KDT4 MARKING GP3NB60K GD3NB60K GP3NB60KD GP3NB60KDFP GB3NB60KD PACKAGE TO-220 DPAK TO-220 TO-220FP D2PAK PACKAGIN |
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STMicroelectronics |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT CHING AND RESONANT TOPOLOGIES s “D” Version ORDERING INFORMATION SALES TYPE STGP3NB60K STGD3NB60KT4 STGP3NB60KD STGP3NB60KDFP STGB3NB60KDT4 MARKING GP3NB60K GD3NB60K GP3NB60KD GP3NB60KDFP GB3NB60KD PACKAGE TO-220 DPAK TO-220 TO-220FP D2PAK PACKAGIN |
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STMicroelectronics |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT CHING AND RESONANT TOPOLOGIES s “D” Version ORDERING INFORMATION SALES TYPE STGP3NB60K STGD3NB60KT4 STGP3NB60KD STGP3NB60KDFP STGB3NB60KDT4 MARKING GP3NB60K GD3NB60K GP3NB60KD GP3NB60KDFP GB3NB60KD PACKAGE TO-220 DPAK TO-220 TO-220FP D2PAK PACKAGIN |
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STMicroelectronics |
STW13NB60 DM ( • ) P tot dv/dt( 1 ) V ISO Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T o |
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STMicroelectronics |
low drop IGBT ■ Low on-voltage drop (VCE(sat)) ■ High current capability ■ Very soft ultra fast recovery antiparallel diode Applications ■ Light dimmer ■ Static relays ■ Motor drive Description This IGBT utilizes the advanced Power MESH™ process featuring extremel |
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STMicroelectronics |
STH13NB60FI Low Voltage Operation (2.7 V to 12 V) Calibrated Directly in ؇C 10 mV/ ؇C Scale Factor ؎ 2؇C Accuracy Over Temperature (typ) ؎ 0.5؇C Linearity (typ) Stable with Large Capacitive Loads Specified –40؇C to +125؇C, Operation to +150؇C Less than 60 mA Qui |
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STMicroelectronics |
STB60NH02L ain-source Voltage Rating 30 V VDS Drain-source Voltage (VGS = 0) 24 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 24 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuous) at TC = 25°C 60 A ID Drain Current (continuous) at TC = 100°C |
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STMicroelectronics |
N-CHANNEL PowerMESH IGBT IC Collector Current (continuous) at Tc = 25 oC IC Collector Current (continuous) at Tc = 100 oC ICM( •) Collector Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor Ts tg Storage T emperature Tj Max. O perating Junct ion T emperat |
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STMicroelectronics |
low drop IGBT ■ Low on-voltage drop (VCE(sat)) ■ High current capability Applications ■ Light dimmer ■ Static relays ■ Motor drive Description This IGBT utilizes the advanced PowerMESH™ process featuring extremely low on-state voltage drop in low-frequency working |
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STMicroelectronics |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT CHING AND RESONANT TOPOLOGIES s “D” Version ORDERING INFORMATION SALES TYPE STGP3NB60K STGD3NB60KT4 STGP3NB60KD STGP3NB60KDFP STGB3NB60KDT4 MARKING GP3NB60K GD3NB60K GP3NB60KD GP3NB60KDFP GB3NB60KD PACKAGE TO-220 DPAK TO-220 TO-220FP D2PAK PACKAGIN |
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STMicroelectronics |
N-channel Power MOSFET tot dv/dt( 1 ) Tstg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation a |
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STMicroelectronics |
N-channel Power MOSFET Type STB60N55F3 STD60N55F3 STF60N55F3 STI60N55F3 STP60N55F3 STU60N55F3 ■ ■ VDSS 55V 55V 55V 55V 55V 55V RDS(on) <8.5mΩ <8.5mΩ <8.5mΩ <8.5mΩ <8.5mΩ <8.5mΩ ID 80A 80A 42A 80A 80A 80A Pw 110W 1 3 2 3 1 3 2 1 110W 30W 110W 110W 110W DPAK TO-220F |
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STMicroelectronics |
low drop IGBT ■ Low on-voltage drop (VCE(sat)) ■ High current capability ■ Very soft ultra fast recovery antiparallel diode Applications ■ Light dimmer ■ Static relays ■ Motor drive Description This IGBT utilizes the advanced Power MESH™ process featuring extremel |
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STMicroelectronics |
N-CHANNEL Power MOSFET Type STB60NF10 STB60NF10-1 STP60NF10 VDSS (@Tjmax) 100V 100V 100V RDS(on) <0.023Ω <0.023Ω <0.023Ω ■ Exceptional dv/dt capability ■ 100% avalanche tested ID 80A 80A 80A Description This Power MOSFET series realized with STMicroelectronics unique |
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STMicroelectronics |
STW13NB60 GRAM ABSOLUTE MAXIMUM RATINGS Sy mb o l Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain- gate Voltage (RGS = 20 kΩ) VGS Gate-source Voltage ID Drain Current (continuous) at Tc = 25 oC ID Drain Current (continuous) at Tc = 100 oC IDM ( •) D |
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STMicroelectronics |
IGBT TYPE VCES VCE(sat) (Max) IC @25°C @100°C STGF7NB60SL 600 V < 1.6 V 7A s POLYSILICON GATE VOLTAGE DRIVEN s LOW THRESHOLD VOLTAGE s LOW ON-VOLTAGE DROP s LOW GATE CHARGE s HIGH CURRENT CAPABILITY DESCRIPTION Using the latest high voltage tech |
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Desde 2024. D4U Semiconductor.
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