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STGD3NB60HD |
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| Part Number | STGD3NB60HD |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix "... |
| Features |
PE & REEL
September 2003
1/10
www.DataSheet4U.com
STGD3NB60HD
ABSOLUTE MAXIMUM RATINGS
Symbol VCES VECR VGE IC IC ICM ( ) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Operating Junction Temperature Value 600 20 ± 20 10 6 24 50 0.4 –55 to 150 Unit V V V A A A W W/°C °C ( ) Pulse width limited by safe operating area THERMAL DATA Rthj-case Rthj-amb Th... |
| Document |
 STGD3NB60HD Data Sheet
PDF 417.73KB |
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