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STMicroelectronics |
STB30NF10 Type STB30NF10 STP30NF10 STP30NF10FP VDSS 100V 100V 100V RDS(on) <0.045Ω <0.045Ω <0.045Ω ID 35A 35A 35A ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization Description This Power MOSFET is the latest d |
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STMicroelectronics |
IGBT • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coeffi |
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STMicroelectronics |
short circuit rugged IGBT ■ ■ ■ Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs 3 1 1 3 2 Applications ■ ■ High frequency inverters Motor drivers D²PAK TO-220 Description This IGBT utilizes the |
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STMicroelectronics |
ultra fast IGBT ■ ■ High frequency operation Lower CRES / CIES ratio (no cross-conduction susceptibility) 2 1 3 1 2 3 Applications ■ ■ High frequency motor controls, inverters, ups HF, SMPS and PFC in both hard switch and resonant topologies TO-247 3 1 TO-220 |
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STMicroelectronics |
Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution • Safe paralleling • Low thermal resistance Applications • Photovoltaic inverters • Uninterruptible power sup |
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STMicroelectronics |
STB30NF20 Type STP30NF20 STW30NF20 STB30NF20 ■ ■ ■ ■ ■ VDSS 200V 200V 200V RDS(on) 0.075Ω 0.075Ω 0.075Ω ID 30A 30A 30A PTOT 125W 125W 125W TO-247 1 3 2 1 3 1 2 Gate charge minimized 100% avalanche tested Excellent figure of merit (RDS*Qg) Very good manuf |
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STMicroelectronics |
N-channel MOSFET Type VDSS @TJ max RDS(on) max ID STB30NM60ND )STI30NM60ND t(sSTF30NM60ND cSTP30NM60ND uSTW30NM60ND 650 V 0.13 Ω 25 A 25 A 25 A(1) 25 A 25 A rod1. Limited only by maximum temperature allowed P ■ The world’s best RDS(on) in TO-220 amongst teth |
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STMicroelectronics |
Trench gate field-stop IGBT • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photo |
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STMicroelectronics |
IGBT ■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no cross conduction susceptibility) ) ■ Short circuit withstand time 10 µs ct(sApplications du ■ High frequency inverters ro ■ Motor drivers te PDescription oleThis IGBT utilizes the advanced P |
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STMicroelectronics |
Trench gate field-stop IGBT 6 µs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 30 A Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control UPS PFC Descr |
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STMicroelectronics |
N-CHANNEL MOSFET ID I DM ( • ) P tot dv/dt( 1) Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal |
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STMicroelectronics |
IGBT ■ High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) t(s)Applications uc ■ High frequency motor controls, inverters, ups d ■ HF, SMPS and PFC in both hard switch and roresonant topologies te PDescription oleThis I |
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STMicroelectronics |
IGBT • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photo |
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STMicroelectronics |
30A high speed trench gate field-stop IGBT • High speed switching • Tight parameters distribution • Safe paralleling • Low thermal resistance • Short circuit rated • Ultrafast soft recovery antiparallel diode 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram C (2, TAB) G (1) |
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STMicroelectronics |
Automotive-grade trench gate field-stop IGBT AEC-Q101 qualified Maximum junction temperature: TJ = 175 °C Logic level gate drive High speed switching series Minimized tail current VCE(sat) = 1.7 V (typ.) @ IC = 30 A Low VF soft recovery co-packaged diode Tight parameters distrib |
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STMicroelectronics |
IGBT • IPM 35 A, 600 V 3-phase IGBT inverter bridge including 2 control ICs for gate driving and freewheeling diodes • 3.3 V, 5 V TTL/CMOS inputs with hysteresis • Internal bootstrap diode • Under-voltage lockout of gate drivers • Smart shutdown function |
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STMicroelectronics |
IGBT • IPM 35 A, 600 V 3-phase IGBT inverter bridge including 2 control ICs for gate driving and freewheeling diodes • 3.3 V, 5 V TTL/CMOS inputs with hysteresis • Internal bootstrap diode • Under-voltage lockout of gate drivers • Smart shutdown function |
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STMicroelectronics |
Power MOSFET Type STB30N65M5 STF30N65M5 STI30N65M5 STP30N65M5 STW30N65M5 VDSS @ TJMAX 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.139 Ω < 0.139 Ω < 0.139 Ω < 0.139 Ω < 0.139 Ω ID 1 3 3 1 2 21 A 21 A(1) 21 A 21 A 21 A 3 12 D²PAK TO-220FP I²PAK 1. Limited o |
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STMicroelectronics |
N-channel MOSFET Type STB30NM60N STI30NM60N STF30NM60N STP30NM60N STW30NM60N VDSS @ TJmax 650 V 650 V 650 V 650 V 650 V RDS(on) max <0.13Ω <0.13Ω <0.13Ω <0.13Ω <0.13Ω ID 25A 25A 25A(1) 25A 25A PW 190 W 190 W 40 W 190 W 190 W 3 1 2 1 3 2 3 1 3 12 D²PAK 2 1 3 I²PAK |
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STMicroelectronics |
600V short-circuit rugged IGBT • IPM 35 A, 600 V 3-phase IGBT inverter bridge including 2 control ICs for gate driving and freewheeling diodes • 3.3 V, 5 V TTL/CMOS inputs with hysteresis • Internal bootstrap diode • Under-voltage lockout of gate drivers • Smart shutdown function |
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Desde 2024. D4U Semiconductor.
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