| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
STMicroelectronics |
N-CHANNEL Power MOSFET Order codes VDSS (@ TJmax) RDS(on) max. STB11NM60T4 STP11NM60 650 V 0.45 Ω • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance ID 11 A Package D²PAK TO-220 Applications • Switching applications Descr |
|
|
|
|
STMicroelectronics |
N-CHANNEL Power MOSFET Order codes VDSS RDS(on) max RDS(on)*Qg ID STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80 < 0.40 Ω 14Ω*nC 11 A ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Swi |
|
|
|
|
STMicroelectronics |
N-CHANNEL Power MOSFET Type VDSS (@TJmax) STB11NM60N-1 STB11NM60N STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N 650 V 650 V 650 V 650 V 650 V 650 V RDS(on) max 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω ID 10 A 10 A 10 A 10 A 10 A(1) 10 A 1. Limited only by maximum t |
|
|
|
|
STMicroelectronics |
N-CHANNEL Power MOSFET Type STB11NK50Z STP11NK50ZFP STP11NK50Z VDSS 500 V 500 V 500 V RDS(on) max ID Pw < 0.52 Ω 10 A 125 W < 0.52 Ω 10 A 30 W < 0.52 Ω 10 A 125 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order codes STB11N65M5 STD11N65M5 STF11N65M5 STP11N65M5 STU11N65M5 VDSS @ RDS(on) TJmax max ID 710 V < 0.48 Ω 9 A ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100% avalanche |
|
|
|
|
STMicroelectronics |
N-CHANNEL Power MOSFET Order codes VDSS (@ TJmax) RDS(on) max. STB11NM60T4 STP11NM60 650 V 0.45 Ω • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance ID 11 A Package D²PAK TO-220 Applications • Switching applications Descr |
|
Desde 2024. D4U Semiconductor.
|