| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
STMicroelectronics |
N-channel Power MOSFET TAB Order code VDS RDS(on)max. ID Package TAB t(s) 3 1 c D2PAK TO-220 1 23 Produ D(2, TAB) olete G(1) - Obs S(3) AM01475V1 roduct(s) Product status link te P STB3N62K3 Obsole STP3N62K3 STB3N62K3 STP3N62K3 620 V 2.5 Ω • 100% avalanch |
|
|
|
|
STMicroelectronics |
N-channel MOSFET Order code VDS RDS(on) max. STF33N60DM6 600 V 128 mΩ • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zen |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET TAB 23 1 DPAK Figure 1. Internal schematic diagram , TAB Order code STD13N65M2 VDS 650 V RDS(on) max ID 0.43 Ω 10 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applica |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order code V DS @ T Jmax STL33N60M2 650 V • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected RDS(on)max 0.135 Ω ID 22 A Applications • Switching applications • LLC converters, r |
|
|
|
|
STMicroelectronics |
N-channel MOSFET Order code VDS RDS(on) max. ID STL33N60DM6 600 V 140 mΩ 21 A • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt rugged |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on ) max. STL3N65M2 650 V 1.8 Ω • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected ID 2.3 A Applications • Switching applications Description This device is |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STL13N60DM2 VDS 600 V RDS(on) max. 0.370 Ω ID 8A 1 2 3 4 PowerFLAT™ 5x6 HV Figure 1: Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View Fast-recovery body diode Extremely low gate charge and input |
|
|
|
|
STMicroelectronics |
N-channel MOSFET Order code VDS at TJ max. RDS(on) max. ID STB13N60M2 650 V 380 mΩ 11 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications G(1) Descr |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STL33N65M2 VDS 650 V RDS(on)max 0.154 Ω ID 20 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Applications Switching applications Description This device is an N-c |
|
|
|
|
STMicroelectronics |
STB3N62K3 Type STB3N62K3 STD3N62K3 STF3N62K3 STP3N62K3 STU3N62K3 VDSS 620 V 620 V 620 V 620 V 620 V RDS(on) max < 2.5 Ω < 2.5 Ω < 2.5 Ω < 2.5 Ω < 2.5 Ω ID 2.7 A 2.7 A 2.7 A(1) 2.7 A 2.7 A PD 45 W 45 W 20 W 45 W 45 W IPAK 3 1 3 2 1 1 3 DPAK D²PAK 3 1 2 1 2 3 |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STL33N60DM2 VDS @ TJmax 650 V RDS(on)max 0.140 Ω ID 21 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Appli |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STF33N60DM2 VDS @ TJmax. 650 V RDS(on) max. 0.130 Ω ID 24 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected A |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS STL33N60M6 600 V • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected RDS(on) max. 137 mΩ Applications • Switching applications • LLC co |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order code STD3N65M6 VDS 650 V RDS(on) max. 1.5 Ω • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected ID 3.5 A Applications • Switching applications D |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET Order codes STB33N65M2 STF33N65M2 STP33N65M2 STI33N65M2 VDS RDS(on) max ID 650 V 0.14 Ω 24 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Figure 1. Internal schematic diagr |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOSFET 3 2 1 TO-220FP narrow leads Figure 1. Internal schematic diagram Order codes STF13N60M2(045Y) VDS @ TJmax 650 V RDS(on) max 0.38 Ω ID 11 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOSFET 3 2 1 TO-220FP 1 23 I2PAKFP (TO-281) Figure 1. Internal schematic diagram AM15572v1 Order codes VDS @ TJmax RDS(on) max ID STF13N60M2 STFI13N60M2 650 V 0.38 Ω 11 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • L |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOSFET 3 2 1 TO-220FP 1 23 I2PAKFP (TO-281) Figure 1. Internal schematic diagram AM15572v1 Order codes VDS @ TJmax RDS(on) max ID STF13N60M2 STFI13N60M2 650 V 0.38 Ω 11 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • L |
|
|
|
|
STMicroelectronics |
N-channel MOSFET Order code VDS at TJ max. RDS(on) max. ID STB13N60M2 650 V 380 mΩ 11 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications G(1) Descr |
|
|
|
|
STMicroelectronics |
N-channel Power MOSFET www.DataSheet4U.com Type VDSS 620 V 620 V 620 V 620 V 620 V RDS(on) max < 2.5 Ω < 2.5 Ω < 2.5 Ω < 2.5 Ω < 2.5 Ω ID 2.7 A 2.7 A 2.7 A(1) 2.7 A 2.7 A Pw 1 3 2 1 3 STB3N62K3 STD3N62K3 STF3N62K3 STP3N62K3 STU3N62K3 45 W 45 W 20 W 45 W 45 W IPAK |
|
Desde 2024. D4U Semiconductor.
|