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13N60M2 |
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| Part Number | 13N60M2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) technology. Thanks to its strip layout and an improved vertical structure, the device AM01476v1_tab exhibits low on-resistan... |
| Features |
Order code
VDS at TJ max.
RDS(on) max.
ID
STB13N60M2
650 V
380 mΩ
11 A
• Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications G(1) Description This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) technology. Thanks to its strip layout and an improved vertical structure, the device AM01476v1_tab exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STB1... |
| Document |
 13N60M2 Data Sheet
PDF 807.56KB |
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