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STMicroelectronics |
STB30NF10 Type STB30NF10 STP30NF10 STP30NF10FP VDSS 100V 100V 100V RDS(on) <0.045Ω <0.045Ω <0.045Ω ID 35A 35A 35A ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization Description This Power MOSFET is the latest d |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. ID PTOT STB30NF20L 200 V 0.075 Ω 30 A 150 W AEC-Q101 qualified Gate charge minimized 100% avalanche tested Excellent FoM (figure of merit) Very low intrinsic capacitance Applications Switching applicatio |
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STMicroelectronics |
short circuit rugged IGBT ■ ■ ■ Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs 3 1 1 3 2 Applications ■ ■ High frequency inverters Motor drivers D²PAK TO-220 Description This IGBT utilizes the |
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STMicroelectronics |
ultra fast IGBT ■ ■ High frequency operation Lower CRES / CIES ratio (no cross-conduction susceptibility) 2 1 3 1 2 3 Applications ■ ■ High frequency motor controls, inverters, ups HF, SMPS and PFC in both hard switch and resonant topologies TO-247 3 1 TO-220 |
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STMicroelectronics |
N-Channel MOSFET 7$% Type VDS RDS(on) max. ID STB130NS04ZB-1 Clamped 9 mΩ 80 A ,3$. Figure 1. Internal schematic diagram • Designed for automotive applications and AEC-Q101 qualified • 100% avalanche tested • Low capacitance and gate charge • 175°C max |
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STMicroelectronics |
N-channel Power MOSFET Order code STB30N65DM6AG VDS 650 V RDS(on) max. 115 mΩ ID 28 A • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely |
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STMicroelectronics |
N-channel Power MOSFET Type www.DataSheet4U.com VDSS 600V 600V 600V 600V 600V RDS(on) Max < 0.13Ω < 0.13Ω < 0.13Ω < 0.13Ω < 0.13Ω ID 25A 25A 25A(1) 25A 25A 3 3 1 2 STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND 3 1 2 1 TO-220 D2PAK TO-220FP 1. Limite |
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STMicroelectronics |
N-CHANNEL MOSFET = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 30 30 ± 16 30 19 120 80 0.64 – 55 to 150 Unit V V V A A A W W/°C °C (q) Pulse width limited by safe operating area (#) Limited by Wire Bonding November 2001 1/6 |
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STMicroelectronics |
ultra fast IGBT ■ ■ High frequency operation Lower CRES / CIES ratio (no cross-conduction susceptibility) 2 1 3 1 2 3 Applications ■ ■ High frequency motor controls, inverters, ups HF, SMPS and PFC in both hard switch and resonant topologies TO-247 3 1 TO-220 |
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STMicroelectronics |
STB30NF20 Type STP30NF20 STW30NF20 STB30NF20 ■ ■ ■ ■ ■ VDSS 200V 200V 200V RDS(on) 0.075Ω 0.075Ω 0.075Ω ID 30A 30A 30A PTOT 125W 125W 125W TO-247 1 3 2 1 3 1 2 Gate charge minimized 100% avalanche tested Excellent figure of merit (RDS*Qg) Very good manuf |
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STMicroelectronics |
ultra fast IGBT Type STGW30NC60WD ■ ■ ■ VCES 600V VCE(sat)Max @25°C < 2.5V IC @100°C 30A High frequency operation Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode TO-247 Description Using the latest h |
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STMicroelectronics |
N-channel MOSFET Type VDSS @TJ max RDS(on) max ID STB30NM60ND )STI30NM60ND t(sSTF30NM60ND cSTP30NM60ND uSTW30NM60ND 650 V 0.13 Ω 25 A 25 A 25 A(1) 25 A 25 A rod1. Limited only by maximum temperature allowed P ■ The world’s best RDS(on) in TO-220 amongst teth |
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STMicroelectronics |
IGBT ■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no cross conduction susceptibility) ) ■ Short circuit withstand time 10 µs ct(sApplications du ■ High frequency inverters ro ■ Motor drivers te PDescription oleThis IGBT utilizes the advanced P |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STP130N8F7 VDS 80 V RDS(on) max. 5.8 mΩ ID 80 A PTOT 205 W Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applica |
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STMicroelectronics |
N-CHANNEL POWER MOSFET PowerFLAT 5x6 Order code VDS RDS(on) max. ID STL30N10F7 100 V 0.035 Ω 8A • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness PTOT 4.8 W D(5, 6, 7, 8 |
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STMicroelectronics |
N-channel Power MOSFET Order code STB30N80K5 VDS 800 V RDS(on) max. 0.18 Ω ID 24 A Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Switching applications Descrip |
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STMicroelectronics |
Silicon carbide Power MOSFET Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (TJ = 200 °C) Very fast and robust intrinsic body diode Low capacitance Applications Figure 1: Internal schematic diagram Solar inv |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR l Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP30N06FI 60 60 ± 20 30 21 120 105 0.7 -65 to 175 175 19 13 120 40 0.27 2000 Unit V V V A A A W W/o C |
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STMicroelectronics |
N-channel Power MOSFET Max247 3 2 1 Figure 1. Internal schematic diagram Order code VDS RDS(on) max. ID PTOT STY130NF20D 200 V 0.012 Ω 130 A 450 W • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge Applications • Switching applications Desc |
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STMicroelectronics |
N-channel MOSFET Type STB30NM60N STI30NM60N STF30NM60N STP30NM60N STW30NM60N VDSS @ TJmax 650 V 650 V 650 V 650 V 650 V RDS(on) max <0.13Ω <0.13Ω <0.13Ω <0.13Ω <0.13Ω ID 25A 25A 25A(1) 25A 25A PW 190 W 190 W 40 W 190 W 190 W 3 1 2 1 3 2 3 1 3 12 D²PAK 2 1 3 I²PAK |
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Desde 2024. D4U Semiconductor.
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