Busque con el número de pieza junto con el fabricante o la descripción
30N65DM6 |
Click to view a larger image
| Part Number | 30N65DM6 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery t... |
| Features |
Order code STB30N65DM6AG
VDS 650 V
RDS(on) max. 115 mΩ
ID 28 A
• AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area wit... |
| Document |
 30N65DM6 Data Sheet
PDF 390.40KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
|