STMicroelectronics 28N Hoja de datos

No.	parte #	Fabricante	Descripción
1	28N65M2	STMicroelectronics	N-channel Power MOSFET Order codes STB28N65M2 STF28N65M2 STP28N65M2 STW28N65M2 VDS RDS(on) max 650 V 0.18 Ω ID 20 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applicati
2	28NM50N	STMicroelectronics	N-Channel Power MOSFET Order codes STB28NM50N STF28NM50N STP28NM50N STW28NM50N VDSS (@Tjmax) 550 V RDS(on) max. < 0.158 Ω ID 21 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Descri
3	STB28N65M2	STMicroelectronics	N-channel Power MOSFET Order codes STB28N65M2 STF28N65M2 STP28N65M2 STW28N65M2 VDS RDS(on) max 650 V 0.18 Ω ID 20 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applicati
4	STP28N65M2	STMicroelectronics	N-channel Power MOSFET Order codes STB28N65M2 STF28N65M2 STP28N65M2 STW28N65M2 VDS RDS(on) max 650 V 0.18 Ω ID 20 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applicati
5	VNP28N04FI	STMicroelectronics	FULLY AUTOPROTECTED POWER MOSFET
6	STI28N60M2	STMicroelectronics	N-CHANNEL POWER MOSFET Order code STB28N60M2 STI28N60M2 STP28N60M2 STW28N60M2 VDS @ TJmax 650 V RDS(on) max. 0.150 Ω ID 22 A Figure 1: Internal schematic diagram D (2 TAB )  Extremely low gate charge  Excellent output capacitance (COSS) profile  100% avalanche test
7	STW28N65M2	STMicroelectronics	N-channel Power MOSFET Order codes STB28N65M2 STF28N65M2 STP28N65M2 STW28N65M2 VDS RDS(on) max 650 V 0.18 Ω ID 20 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applicati
8	STB28N60DM2	STMicroelectronics	N-channel Power MOSFET Order code STB28N60DM2 STP28N60DM2 STW28N60DM2 VDS @ TJmax. 600 V RDS(on) max. ID PTOT 0.16 Ω 21 A 170 W Figure 1: Internal schematic diagram  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100
9	STP28N60DM2	STMicroelectronics	N-channel Power MOSFET Order code STB28N60DM2 STP28N60DM2 STW28N60DM2 VDS @ TJmax. 600 V RDS(on) max. ID PTOT 0.16 Ω 21 A 170 W Figure 1: Internal schematic diagram  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100
10	STW28N60DM2	STMicroelectronics	N-channel Power MOSFET Order code STB28N60DM2 STP28N60DM2 STW28N60DM2 VDS @ TJmax. 600 V RDS(on) max. ID PTOT 0.16 Ω 21 A 170 W Figure 1: Internal schematic diagram  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100
11	STFU28N65M2	STMicroelectronics	N-CHANNEL POWER MOSFET Order code STFU28N65M2 VDS 650 V RDS(on) max 0.18 Ω ID 20 A  Extremely low gate charge  Excellent output capacitance (Coss) profile  100% avalanche tested  Zener-protected Applications  Switching applications Description This device is an N-
12	STF28N60DM2	STMicroelectronics	N-CHANNEL POWER MOSFET Order code STF28N60DM2 VDS @ TJmax. 650 V RDS(on) max. 0.16 Ω ID PTOT 21 A 30 W 3 2 1 TO-220FP Figure 1: Internal schematic diagram  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche
13	STF28N65M2	STMicroelectronics	N-channel Power MOSFET Order codes STB28N65M2 STF28N65M2 STP28N65M2 STW28N65M2 VDS RDS(on) max 650 V 0.18 Ω ID 20 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applicati
14	28NM60ND	STMicroelectronics	N-Channel MOSFET Order codes VDS @ TJ max. RDS(on) max ID STB28NM60ND STF28NM60ND 650 V STP28NM60ND 0.150 Ω 23 A STW28NM60ND • Intrinsic fast-recovery body diode • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance • E
15	28N60M2	STMicroelectronics	N-channel Power MOSFET Order code STB28N60M2 STI28N60M2 STP28N60M2 STW28N60M2 VDS @ TJmax 650 V RDS(on) max. 0.150 Ω ID 22 A Figure 1: Internal schematic diagram D (2 TAB )  Extremely low gate charge  Excellent output capacitance (COSS) profile  100% avalanche test
16	VNP28N04	STMicroelectronics	OMNIFET: FULLY AUTOPROTECTED POWER MOSFET During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user’s standpo
17	VNV28N04	STMicroelectronics	FULLY AUTOPROTECTED POWER MOSFET
18	STB28N60M2	STMicroelectronics	N-CHANNEL POWER MOSFET Order code STB28N60M2 STI28N60M2 STP28N60M2 STW28N60M2 VDS @ TJmax 650 V RDS(on) max. 0.150 Ω ID 22 A Figure 1: Internal schematic diagram D (2 TAB )  Extremely low gate charge  Excellent output capacitance (COSS) profile  100% avalanche test
19	VNB28N04	STMicroelectronics	FULLY AUTOPROTECTED POWER MOSFET
20	STW28NK60Z	STMicroelectronics	N-CHANNEL MOSFET TYPE STW28NK60Z s s Figure 1: Package ID 27 A PW 350 W VDSS 600 V RDS(on) < 0.185 Ω TYPICAL RDS(on) = 0.155 Ω EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED www.DataSheet4U.com s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPACITANCES s